TDA8359JU NXP Semiconductors, TDA8359JU Datasheet - Page 2

Video ICs FULL BDG VERT DEFL O/P CIRC

TDA8359JU

Manufacturer Part Number
TDA8359JU
Description
Video ICs FULL BDG VERT DEFL O/P CIRC
Manufacturer
NXP Semiconductors
Type
Full Bridge Vertical Deflection Output Circuitr
Datasheet

Specifications of TDA8359JU

Maximum Operating Temperature
+ 85 C
Package / Case
SOT-523
Minimum Operating Temperature
- 25 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
TDA8359J/N2,112
Philips Semiconductors
FEATURES
QUICK REFERENCE DATA
ORDERING INFORMATION
2002 Jan 21
Supplies
V
V
I
I
P
Inputs and outputs
V
I
Flyback switch
I
Thermal data; in accordance with IEC 60747-1
T
T
T
TDA8359J
q(P)(av)
q(FB)(av)
o(p-p)
o(peak)
stg
amb
j
Few external components required
High efficiency fully DC-coupled vertical bridge output
circuit
Vertical flyback switch with short rise and fall times
Built-in guard circuit
Thermal protection circuit
Improved EMC performance due to differential inputs.
P
FB
tot
i(p-p)
Full bridge vertical deflection output circuit
in LVDMOS
NUMBER
SYMBOL
TYPE
supply voltage
flyback supply voltage
average quiescent supply current
average quiescent flyback supply current
total power dissipation
input voltage (peak-to-peak value)
output current (peak-to-peak value)
maximum (peak) output current
storage temperature
ambient temperature
junction temperature
DBS9P
NAME
plastic DIL-bent-SIL power package; 9 leads (lead length
12/11 mm); exposed die pad
PARAMETER
2
DESCRIPTION
GENERAL DESCRIPTION
The TDA8359J is a power circuit for use in 90 and 110
colour deflection systems for 25 to 200 Hz field
frequencies, and for 4 : 3 and 16 : 9 picture tubes. The IC
contains a vertical deflection output circuit, operating as a
high efficiency class G system. The full bridge output
circuit allows DC coupling of the deflection coil in
combination with single positive supply voltages.
The IC is constructed in a Low Voltage DMOS (LVDMOS)
process that combines bipolar, CMOS and DMOS
devices. DMOS transistors are used in the output stage
because of absence of second breakdown.
PACKAGE
during scan
during scan
t
CONDITIONS
1.5 ms
7.5
2
MIN.
55
25
V
P
12
45
10
1000
TYP.
Product specification
TDA8359J
18
66
15
10
10
1500
3.2
150
MAX.
1.8
150
85
SOT523-1
VERSION
V
V
mA
mA
W
mV
A
A
UNIT
C
C
C

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