SI4825DY-T1-GE3 Vishay, SI4825DY-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SI4825DY-T1-GE3
• Description: MOSFET P-CH 30V 8.1A 8-SOIC
• Manufacturer: Vishay

Specifications of SI4825DY-T1-GE3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 14 mOhm @ 11.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8.1A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 71nC @ 10V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -11.5A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 22mohm
• Rds(on) Test Voltage Vgs: 25V
• Threshold Voltage Vgs Typ: -3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI4825DY-T1-GE3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71291
S09-0868-Rev. D, 18-May-09
0.025
0.020
0.015
0.010
0.005
0.000
10
50
10
8
6
4
2
0
1
0.0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
= 11.5 A
0.2
On-Resistance vs. Drain Current
= 15 V
12
10
V
T
V
Q
GS
J
SD
g
= 150 °C
- Total Gate Charge (nC)
= 4.5 V
0.4
- Source-to-Drain Voltage (V)
I
D
Gate Charge
20
24
- Drain Current (A)
0.6
30
36
0.8
V
GS
T
= 10 V
48
40
J
= 25 °C
1.0
1.2
50
60
5000
4000
3000
2000
1000
0.05
0.04
0.03
0.02
0.01
0.00
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
C
V
I
rss
D
- 25
GS
= 11.5 A
= 10 V
6
2
V
V
DS
T
GS
C
0
J
oss
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
Capacitance
25
12
4
I
D
= 11.5 A
50
Vishay Siliconix
C
18
iss
6
75
Si4825DY
www.vishay.com
100
24
8
125
150
30
10
3