SI4825DY-T1-GE3 Vishay, SI4825DY-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SI4825DY-T1-GE3
• Description: MOSFET P-CH 30V 8.1A 8-SOIC
• Manufacturer: Vishay

Specifications of SI4825DY-T1-GE3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 14 mOhm @ 11.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8.1A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 71nC @ 10V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -11.5A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 22mohm
• Rds(on) Test Voltage Vgs: 25V
• Threshold Voltage Vgs Typ: -3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI4825DY-T1-GE3TR

Si4825DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71291.
www.vishay.com
4
- 0.2
- 0.4
1.0
0.8
0.6
0.4
0.2
0.0
0.01
0.01
0.1
- 50
0.1
2
1
2
1
10 -
10 -
Duty Cycle = 0.5
0.05
0.05
0.2
4
4
0.1
0.02
0.02
Duty Cycle = 0.5
- 25
0.2
0.1
Single Pulse
0
Threshold Voltage
T
J
- Temperature (°C)
10 -
25
3
Single Pulse
50
10 -
I
D
3
Normalized Thermal Transient Impedance, Junction-to-Ambient
= 250 µA
75
Normalized Thermal Transient Impedance, Junction-to-Foot
10 -
100
2
125
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10 -
150
2
10 -
1
50
40
30
20
10
10 -
0
1
10 -
1
2
Single Pulse Power, Junction-to-Ambient
10 -
1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
1
-
Time (s)
T
t
1
A
1
S09-0868-Rev. D, 18-May-09
= P
t
2
DM
Document Number: 71291
Z
10
thJA
thJA
100
t
t
1
2
(t)
= 68 °C/W
100
600
10
600