IRF730SPBF Vishay, IRF730SPBF Datasheet

MOSFET N-CH 400V 5.5A D2PAK

IRF730SPBF

Manufacturer Part Number
IRF730SPBF
Description
MOSFET N-CH 400V 5.5A D2PAK
Manufacturer
Vishay
Datasheet

Specifications of IRF730SPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1 Ohm @ 3.3A, 10V
Drain To Source Voltage (vdss)
400V
Current - Continuous Drain (id) @ 25° C
5.5A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
38nC @ 10V
Input Capacitance (ciss) @ Vds
700pF @ 25V
Power - Max
3.1W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Transistor Polarity
N Channel
Continuous Drain Current Id
5.5A
Drain Source Voltage Vds
400V
On Resistance Rds(on)
1ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Configuration
Single
Resistance Drain-source Rds (on)
1 Ohms
Drain-source Breakdown Voltage
400 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
5.5 A
Power Dissipation
3.1 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRF730SPBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF730SPBF
Quantity:
70 000
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91048
S10-2554-Rev. B, 08-Nov-10
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Linear Derating Factor (PCB Mount)
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
DS
DS(on)
g
gs
gd
SD
DD
(Max.) (nC)
(nC)
(V)
(nC)
 5.5 A, dI/dt  90 A/μs, V
= 50 V, starting T
()
K
SMD-220
a
a
D
G
J
= 25 °C, L = 16 mH, R
S
c
a
DD
b
V
 V
GS
e
= 10 V
DS
G
, T
N-Channel MOSFET
J
e
Single
 150 °C.
400
5.7
38
22
g
SMD-220
SiHF730S-GE3
IRF730SPbF
SiHF730S-E3
SiHF730S-E3
IRF730S
SiHF730S
= 25 , I
C
D
S
= 25 °C, unless otherwise noted)
Power MOSFET
V
1.0
GS
AS
at 10 V
= 5.5 A (see fig. 12).
T
T
for 10 s
C
A
= 25 °C
= 25 °C
T
T
C
C
= 100 °C
= 25 °C
FEATURES
• Halogen-free According to IEC 61249-2-21
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The SMD-220 is a surface mount power package capable of
accommodating die size up to HEX-4. It provides the
highest
on-resistance in any existing surface mount package. The
SMD-220 is suitable for high current applications because
of its low internal connection resistance and can dissipate
up to 2.0 W in a typical surface mount application.
Definition
SMD-220
SiHF730STRL-GE3
IRF730STRLPbF
SiHF730STL-E3
SiHF730STL-E3
IRF730STRL
SiHF730STL
power
SYMBOL
T
dV/dt
J
V
V
E
E
I
I
, T
P
device
DM
I
AR
GS
DS
AS
AR
D
D
stg
a
a
capability
a
a
a
a
design,
IRF730S, SiHF730S
- 55 to + 150
and
LIMIT
0.025
300
± 20
0.59
400
290
5.5
3.5
5.5
7.4
3.1
4.0
22
74
low
SMD-220
SiHF730STRR-GE3
-
-
-
-
-
Vishay Siliconix
d
the
on-resistance
lowest
www.vishay.com
UNIT
W/°C
V/ns
a
possible
mJ
mJ
°C
W
V
A
A
and
1

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IRF730SPBF Summary of contents

Page 1

... The SMD-220 is suitable for high current applications because N-Channel MOSFET of its low internal connection resistance and can dissipate typical surface mount application. SMD-220 SMD-220 SiHF730S-GE3 SiHF730STRL-GE3 IRF730SPbF IRF730STRLPbF SiHF730S-E3 SiHF730STL-E3 SiHF730S-E3 SiHF730STL-E3 IRF730S IRF730STRL SiHF730S SiHF730STL = 25 ° ...

Page 2

... IRF730S, SiHF730S Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...

Page 3

... Fig Typical Output Characteristics, T Document Number: 91048 S10-2554-Rev. B, 08-Nov-10 4 µs Pulse Width ° 91048_03 = 25 ° µs Pulse Width T = 150 ° 91048_04 = 150 °C Fig Normalized On-Resistance vs. Temperature C IRF730S, SiHF730S Vishay Siliconix 1 10 ° 150 ° µs Pulse Width Gate-to-Source Voltage ( Fig ...

Page 4

... IRF730S, SiHF730S Vishay Siliconix 1500 MHz iss rss 1200 oss C 900 600 C C 300 Drain-to-Source Voltage ( 91048_05 Fig Typical Capacitance vs. Drain-to-Source Voltage 3 320 200 Total Gate Charge (nC) 91048_06 G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com Shorted iss oss rss 1 10 91048_07 Fig ...

Page 5

... Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91048 S10-2554-Rev. B, 08-Nov-10 Fig. 10a - Switching Time Test Circuit 90 % 125 150 10 % Fig. 10b - Switching Time Waveforms - Rectangular Pulse Duration (s) 1 IRF730S, SiHF730S Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % ...

Page 6

... IRF730S, SiHF730S Vishay Siliconix Vary t to obtain p required D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit 91048_12c Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Fig. 12b - Unclamped Inductive Waveforms 700 Top 600 ...

Page 7

... Note Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91048. ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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