IRF730SPBF Vishay, IRF730SPBF Datasheet - Page 4

• Manufacturer Part Number: IRF730SPBF
• Description: MOSFET N-CH 400V 5.5A D2PAK
• Manufacturer: Vishay

Specifications of IRF730SPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1 Ohm @ 3.3A, 10V
• Drain To Source Voltage (vdss): 400V
• Current - Continuous Drain (id) @ 25° C: 5.5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 700pF @ 25V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 5.5A
• Drain Source Voltage Vds: 400V
• On Resistance Rds(on): 1ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Configuration: Single
• Resistance Drain-source Rds (on): 1 Ohms
• Drain-source Breakdown Voltage: 400 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 5.5 A
• Power Dissipation: 3.1 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRF730SPBF

IRF730S, SiHF730S
Vishay Siliconix
www.vishay.com
4
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
91048_05
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
91048_06
1500
1200
900
600
300
20
16
12
0
8
4
0
10
0
I
0
D
= 3.5 A
V
V
DS ,
10
DD
Q
= 80 V
G
Drain-to-Source Voltage (V)
V
, Total Gate Charge (nC)
DD
= 200 V
V
20
DD
V
C
C
C
GS
iss
rss
oss
= 320 V
= C
= 0 V, f = 1 MHz
= C
= C
C
C
C
10
gs
gd
iss
oss
rss
30
ds
1
+ C
+ C
gd
gd
For test circuit
see figure 13
, C
40
ds
Shorted
50
91048_07
91048_08
Fig. 7 - Typical Source-Drain Diode Forward Voltage
10
10
10
0.1
10
1
0
2
5
2
5
2
5
2
1
Fig. 8 - Maximum Safe Operating Area
0.1
0.6
150
2
°
5
V
C
0.7
V
DS
SD
1
Operation in this area limited
, Drain-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
2
0.8
5
T
T
Single Pulse
10
C
J
25
by R
= 150 °C
= 25 °C
2
°
0.9
C
DS(on)
S10-2554-Rev. B, 08-Nov-10
5
10
Document Number: 91048
2
1.0
2
10
100
1
10
5
ms
10
V
µs
ms
1.1
GS
µs
3
2
= 0 V
5
1.2
10
4