SIR470DP-T1-GE3 Vishay, SIR470DP-T1-GE3 Datasheet - Page 3
![MOSFET N-CH 40V 60A PPAK 8SOIC](/photos/5/42/54289/pkg_5881_sml.jpg)
SIR470DP-T1-GE3
Manufacturer Part Number
SIR470DP-T1-GE3
Description
MOSFET N-CH 40V 60A PPAK 8SOIC
Manufacturer
Vishay
Datasheet
1.SIR470DP-T1-GE3.pdf
(7 pages)
Specifications of SIR470DP-T1-GE3
Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.3 mOhm @ 20A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
60A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
155nC @ 10V
Input Capacitance (ciss) @ Vds
5660pF @ 20V
Power - Max
104W
Mounting Type
Surface Mount
Package / Case
PowerPAK® SO-8
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
0.0023 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
190 S
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
38.8 A
Power Dissipation
6250 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
60A
Drain Source Voltage Vds
40V
On Resistance Rds(on)
2.7mohm
Rds(on) Test Voltage Vgs
20V
Threshold Voltage Vgs Typ
2.5V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SIR470DP-T1-GE3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SIR470DP-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 68899
S-82295-Rev. A, 22-Sep-08
0.0025
0.0023
0.0021
0.0019
0.0017
0.0015
10
80
64
48
32
16
On-Resistance vs. Drain Current and Gate Voltage
0
8
6
4
2
0
0.0
0
0
I
D
= 20 A
V
GS
0.5
16
21
V
= 10 thru 4 V
DS
Output Characteristics
Q
V
g
- Drain-to-Source Voltage (V)
I
DS
V
D
- Total Gate Charge (nC)
V
GS
GS
- Drain Current (A)
= 10 V
Gate Charge
1.0
42
32
= 4.5 V
= 10 V
V
DS
= 20 V
1.5
48
63
V
GS
V
= 3 V
DS
= 30 V
2.0
64
84
New Product
105
2.5
80
7500
6000
4500
3000
1500
1.8
1.5
1.2
0.9
0.6
10
8
6
4
2
0
0
- 50
0
0
C
rss
On-Resistance vs. Junction Temperature
- 25
T
I
D
C
= 20 A
= 125 °C
T
1
8
V
C
V
Transfer Characteristics
DS
GS
T
= 25 °C
0
C
J
C
oss
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
iss
25
16
Capacitance
2
V
50
GS
Vishay Siliconix
= 10 V
24
3
75
V
GS
SiR470DP
T
C
= 4.5 V
100
= - 55 °C
www.vishay.com
32
4
125
150
40
5
3