SIR470DP Vishay Siliconix, SIR470DP Datasheet

no-image

SIR470DP

Manufacturer Part Number
SIR470DP
Description
N-Channel MOSFET
Manufacturer
Vishay Siliconix
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SIR470DP
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SIR470DP-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SIR470DP-T1-GE3
Quantity:
983
Company:
Part Number:
SIR470DP-T1-GE3
Quantity:
70 000
www.DataSheet4U.com
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 54 °C/W.
Document Number: 68899
S-82295-Rev. A, 22-Sep-08
PRODUCT SUMMARY
Ordering Information: SiR470DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
DS
40
(V)
8
6.15 mm
D
7
D
0.00265 at V
0.0023 at V
6
D
PowerPAK
R
http://www.vishay.com/ppg?73257
5
Bottom View
DS(on)
D
GS
GS
(Ω)
J
1
= 10 V
®
= 150 °C)
= 4.5 V
b, f
S
SO-8
2
S
N-Channel 40-V (D-S) MOSFET
3
S
5.15 mm
4
I
D
G
60
60
(A)
a
d, e
). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
A
= 25 °C, unless otherwise noted
Q
45.5 nC
Steady State
g
L = 0.1 mH
T
T
T
T
T
T
T
T
T
T
(Typ.)
C
C
A
A
C
A
C
C
A
A
t ≤ 10 s
New Product
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free
• TrenchFET
• 100 % R
• 100 % UIS Tested
• Secondary Side Synchronous Rectification
• Power Supply
Symbol
Symbol
T
R
R
J
V
V
E
I
I
P
, T
DM
I
I
AS
thJC
thJA
GS
DS
AS
D
S
D
stg
g
Tested
®
Gen III Power MOSFET
Typical
G
0.9
15
N-Channel MOSFET
- 55 to 150
38.8
6.25
5.6
4.0
Limit
31
± 20
66.6
100
125
104
260
60
60
60
40
50
b, c
b, c
b, c
D
S
a
a
b, c
a
b, c
Maximum
1.2
20
Vishay Siliconix
SiR470DP
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
V
A
RoHS
COMPLIANT
1

Related parts for SIR470DP

SIR470DP Summary of contents

Page 1

... Bottom View Ordering Information: SiR470DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy ...

Page 2

... SiR470DP Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... Gate Charge Document Number: 68899 S-82295-Rev. A, 22-Sep-08 New Product 1.5 2.0 2 105 SiR470DP Vishay Siliconix ° 125 ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics ...

Page 4

... SiR470DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 150 ° 0.1 0.01 0.001 0.0 0.2 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.5 0.2 - 0.1 - 0.4 - 0 Temperature (°C) J Threshold Voltage www.DataSheet4U.com www.vishay.com 4 New Product °C J 0.6 0.8 1.0 1 250 µ ...

Page 5

... Package Limited Case Temperature (°C) C Current Derating* 75 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper J(max) SiR470DP Vishay Siliconix 100 125 150 3.0 2.4 1.8 1.2 0.6 0 100 T - Ambient Temperature (°C) A Power, Junction-to-Ambient www ...

Page 6

... SiR470DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.02 Single Pulse 0. www.DataSheet4U.com Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www ...

Page 7

All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or ...

Related keywords