SIR470DP-T1-GE3 Vishay, SIR470DP-T1-GE3 Datasheet - Page 6
![MOSFET N-CH 40V 60A PPAK 8SOIC](/photos/5/42/54289/pkg_5881_sml.jpg)
SIR470DP-T1-GE3
Manufacturer Part Number
SIR470DP-T1-GE3
Description
MOSFET N-CH 40V 60A PPAK 8SOIC
Manufacturer
Vishay
Datasheet
1.SIR470DP-T1-GE3.pdf
(7 pages)
Specifications of SIR470DP-T1-GE3
Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.3 mOhm @ 20A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
60A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
155nC @ 10V
Input Capacitance (ciss) @ Vds
5660pF @ 20V
Power - Max
104W
Mounting Type
Surface Mount
Package / Case
PowerPAK® SO-8
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
0.0023 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
190 S
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
38.8 A
Power Dissipation
6250 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
60A
Drain Source Voltage Vds
40V
On Resistance Rds(on)
2.7mohm
Rds(on) Test Voltage Vgs
20V
Threshold Voltage Vgs Typ
2.5V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SIR470DP-T1-GE3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SIR470DP-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
SiR470DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com
6
0.01
0.01
0.1
0.1
1
http://www.vishay.com/ppg?68899.
10
1
10
-4
-4
0.1
0.02
0.05
0.2
Duty Cycle = 0.5
Duty Cycle = 0.5
0.2
0.1
Single Pulse
0.02
10
-3
Single Pulse
10
0.05
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Case
10
-2
New Product
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
-2
10
-1
1
10
-1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
t
A
1
1
= P
S-82295-Rev. A, 22-Sep-08
t
2
Document Number: 68899
DM
100
Z
thJA
thJA
t
t
1
2
(t)
= 54 °C/W
1000
1
0