IRF620 Vishay, IRF620 Datasheet - Page 2

• Manufacturer Part Number: IRF620
• Description: MOSFET N-CH 200V 5.2A TO-220AB
• Manufacturer: Vishay

Specifications of IRF620

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 800 mOhm @ 3.1A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 5.2A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Input Capacitance (ciss) @ Vds: 260pF @ 25V
• Power - Max: 50W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.8 Ohms
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 5.2 A
• Power Dissipation: 50 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF620; IRF620IR

IRF620, SiHF620
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.
www.vishay.com
2
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SPECIFICATIONS (T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
Temperature Coefficient
J
= 25 °C, unless otherwise noted)
a
SYMBOL
This datasheet is subject to change without notice.
SYMBOL
V
R
V
C
t
t
R
I
I
R
R
V
DS(on)
C
C
Q
V
GS(th)
Q
GSS
d(on)
d(off)
I
Q
DSS
g
Q
t
DS
L
L
SM
t
I
t
t
on
thCS
thJC
DS
oss
SD
thJA
iss
rss
S
rr
fs
gs
gd
r
f
D
S
g
rr
/T
J
Between lead,
6 mm (0.25") from
package and center of
die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
V
V
T
GS
GS
V
J
R
DS
T
Intrinsic turn-on time is negligible (turn-on is dominated by L
= 25 °C, I
g
J
Reference to 25 °C, I
= 10 V
= 10 V
= 18 , R
= 25 °C, I
= 160 V, V
V
V
V
V
f = 1.0 MHz, see fig. 5
V
TYP.
TEST CONDITIONS
DD
0.50
DS
DS
GS
DS
-
-
= 100 V, I
= 200 V, V
= V
= 0 V, I
V
= 50 V, I
F
V
GS
V
= 4.8 A, dI/dt = 100 A/s
DS
D
S
GS
GS
I
GS
D
= 5.2 A, V
= 20 , see fig. 10
= ± 20 V
= 25 V,
, I
= 4.8 A, V
= 0 V,
see fig. 6 and 13
= 0 V, T
D
D
D
= 250 μA
D
= 250 μA
I
GS
D
= 3.1 A
= 4.8 A,
= 3.1 A
D
= 0 V
GS
J
= 1 mA
DS
= 125 °C
G
G
= 0 V
= 160 V,
b
MAX.
b
D
S
b
b
D
S
2.5
62
-
MIN.
200
2.0
1.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S11-0510-Rev. B, 21-Mar-11
www.vishay.com/doc?91000
Document Number: 91027
TYP.
0.29
0.91
260
100
150
7.2
4.5
7.5
30
22
19
13
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
MAX.
± 100
0.80
250
300
4.0
3.0
7.9
5.2
1.8
1.8
S
25
14
18
-
-
-
-
-
-
-
-
-
-
-
-
and L
D
UNIT
V/°C
)
nA
μA
nC
nH
μC
pF
ns
ns

V
V
S
A
V