IRF620 Vishay, IRF620 Datasheet - Page 5

• Manufacturer Part Number: IRF620
• Description: MOSFET N-CH 200V 5.2A TO-220AB
• Manufacturer: Vishay

Specifications of IRF620

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 800 mOhm @ 3.1A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 5.2A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Input Capacitance (ciss) @ Vds: 260pF @ 25V
• Power - Max: 50W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.8 Ohms
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 5.2 A
• Power Dissipation: 50 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF620; IRF620IR

Document Number: 91027
S11-0510-Rev. B, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
91027_09
Fig. 9 - Maximum Drain Current vs. Case Temperature
Vary t
required I
Fig. 12a - Unclamped Inductive Test Circuit
6.0
5.0
4.0
3.0
2.0
1.0
0.0
91027_11
p
25
to obtain
AS
10
0.1
10
-2
R
1
10 V
10
G
50
T
0.05
0.02
0.01
-5
0 − 0.5
0.2
0.1
V
C
DS
, Case Temperature (°C)
t
p
75
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
I
AS
D.U.T.
10
0.01 Ω
L
100
-4
Single Pulse
(Thermal Response)
125
This datasheet is subject to change without notice.
+
-
10
V
t
DD
150
-3
1
, Rectangular Pulse Duration (s)
A
10
-2
Fig. 12b - Unclamped Inductive Waveforms
V
I
90 %
10 %
Fig. 10a - Switching Time Test Circuit
AS
Fig. 10b - Switching Time Waveforms
0.1
DS
V
V
DS
GS
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
G
10 V
V
GS
t
d(on)
Notes:
1. Duty Factor, D = t
2. Peak T
V
DS
t
r
t
1
IRF620, SiHF620
p
j
= P
P
DM
D.U.T.
DM
www.vishay.com/doc?91000
x Z
Vishay Siliconix
R
t
D
1
1
t
thJC
d(off)
/t
V
2
DS
t
+ T
2
t
C
f
10
V
+
-
www.vishay.com
V
DD
DD
5