IRF620 Vishay, IRF620 Datasheet - Page 4

MOSFET N-CH 200V 5.2A TO-220AB

IRF620

Manufacturer Part Number
IRF620
Description
MOSFET N-CH 200V 5.2A TO-220AB
Manufacturer
Vishay
Datasheet

Specifications of IRF620

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
800 mOhm @ 3.1A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
5.2A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
14nC @ 10V
Input Capacitance (ciss) @ Vds
260pF @ 25V
Power - Max
50W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.8 Ohms
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
5.2 A
Power Dissipation
50 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF620
IRF620IR

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IRF620, SiHF620
Vishay Siliconix
www.vishay.com
4
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
91027_05
91027_06
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
750
600
450
300
150
20
16
12
0
8
4
0
10
0
0
I
D
= 4.8 A
V
DS ,
3
Q
Drain-to-Source Voltage (V)
G
, Total Gate Charge (nC)
V
6
V
C
C
C
DS
GS
iss
rss
oss
= 40 V
= C
= 0 V, f = 1 MHz
= C
= C
V
DS
10
gs
gd
ds
1
= 100 V
9
C
+ C
C
+ C
C
rss
oss
iss
V
gd
gd
DS
, C
For test circuit
see figure 13
= 160 V
ds
This datasheet is subject to change without notice.
12
Shorted
15
91027_07
91027_08
Fig. 7 - Typical Source-Drain Diode Forward Voltage
10
10
10
0.1
10
1
0
2
1
5
2
5
2
5
2
0.5
0.1
Fig. 8 - Maximum Safe Operating Area
150
2
V
V
°
C
5
SD
DS
Operation in this area limited
, Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
0.8
1
2
25
T
T
Single Pulse
C
J
by R
= 150 °C
°
= 25 °C
5
C
1.0
10
DS(on)
S11-0510-Rev. B, 21-Mar-11
www.vishay.com/doc?91000
2
Document Number: 91027
5
1.3
10
2
V
2
GS
10
100
1
10
ms
= 0 V
µs
ms
µs
5
10
1.5
3

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