IRFD9010PBF Vishay, IRFD9010PBF Datasheet - Page 3
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IRFD9010PBF
Manufacturer Part Number
IRFD9010PBF
Description
MOSFET P-CH 50V 1.1A 4-DIP
Manufacturer
Vishay
Series
HEXFET®r
Specifications of IRFD9010PBF
Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
500 mOhm @ 580mA, 10V
Drain To Source Voltage (vdss)
50V
Current - Continuous Drain (id) @ 25° C
1.1A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
11nC @ 10V
Input Capacitance (ciss) @ Vds
240pF @ 25V
Power - Max
1W
Mounting Type
Through Hole
Package / Case
4-DIP (0.300", 7.62mm)
Minimum Operating Temperature
- 55 C
Resistance Drain-source Rds (on)
0.35 Ohms
Forward Transconductance Gfs (max / Min)
2.5 S
Drain-source Breakdown Voltage
50 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
1.1 A
Power Dissipation
1 W
Maximum Operating Temperature
+ 125 C
Mounting Style
Through Hole
Continuous Drain Current Id
-1.1A
Drain Source Voltage Vds
-50V
On Resistance Rds(on)
350mohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-4V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRFD9010PBF
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Document Number: 91405
S10-0998-Rev. A, 26-Apr-10
0.001
0.01
0.1
10
10
10
8
6
4
2
0
8
6
4
2
0
1
0
0
0
Fig. 3 - Typical Transfer Characteristics
- 10 V
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Output Characteristics
80 μs Pulse Width
80 μs Pulse Width
V
T
DS
- V
- V
- V
J
= 150 °C
= 2 x V
GS
GS
GS
5
1
3
, Drain-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
80 μs Pulse Width
GS
10
T
2
4
J
= 25 °C
15
3
6
V
V
GS
GS
20
4
8
= - 6 V
= - 6 V
- 10 V
- 8 V
- 7 V
- 5 V
- 4 V
- 8 V
- 7 V
- 5 V
- 4 V
25
10
5
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 4 - Normalized On-Resistance vs. Temperature
500
400
300
200
100
3.0
2.4
1.8
1.2
0.6
20
16
12
0
0
8
4
0
- 60
1
0
I
I
- 40
D
D
= - 4.7 V
= - 4.7 A
- V
- 20
T
GS
3
J
Q
IRFD9010, SiHFD9010
, Junction Temperature (°C)
, Drain-to-Source Voltage (V)
g
, Total Gate Charge (nC)
0
20
6
V
C
C
C
40
GS
V
iss
rss
oss
DS
10
= 0 V, f = 1 MHz
= C
= C
= C
= - 40 V
60
C
C
C
gs
oss
gd
iss
rss
ds
9
+ C
80
+ C
Vishay Siliconix
For Test Circuit
See Figure 13
V
gd
100
gd
GS
, C
= - 10 V
ds
12
120
Shorted
140
www.vishay.com
160
100
15
3