IRFD9010PBF Vishay, IRFD9010PBF Datasheet - Page 3

• Manufacturer Part Number: IRFD9010PBF
• Description: MOSFET P-CH 50V 1.1A 4-DIP
• Manufacturer: Vishay
• Series: HEXFET®r

Specifications of IRFD9010PBF

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 500 mOhm @ 580mA, 10V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 1.1A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 11nC @ 10V
• Input Capacitance (ciss) @ Vds: 240pF @ 25V
• Power - Max: 1W
• Mounting Type: Through Hole
• Package / Case: 4-DIP (0.300", 7.62mm)
• Minimum Operating Temperature: - 55 C
• Resistance Drain-source Rds (on): 0.35 Ohms
• Forward Transconductance Gfs (max / Min): 2.5 S
• Drain-source Breakdown Voltage: 50 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 1.1 A
• Power Dissipation: 1 W
• Maximum Operating Temperature: + 125 C
• Mounting Style: Through Hole
• Continuous Drain Current Id: -1.1A
• Drain Source Voltage Vds: -50V
• On Resistance Rds(on): 350mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRFD9010PBF

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Document Number: 91405
S10-0998-Rev. A, 26-Apr-10
0.001
0.01
0.1
10
10
10
8
6
4
2
0
8
6
4
2
0
1
0
0
0
Fig. 3 - Typical Transfer Characteristics
- 10 V
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Output Characteristics
80 μs Pulse Width
80 μs Pulse Width
V
T
DS
- V
- V
- V
J
= 150 °C
= 2 x V
GS
GS
GS
5
1
3
, Drain-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
80 μs Pulse Width
GS
10
T
2
4
J
= 25 °C
15
3
6
V
V
GS
GS
20
4
8
= - 6 V
= - 6 V
- 10 V
- 8 V
- 7 V
- 5 V
- 4 V
- 8 V
- 7 V
- 5 V
- 4 V
25
10
5
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 4 - Normalized On-Resistance vs. Temperature
500
400
300
200
100
3.0
2.4
1.8
1.2
0.6
20
16
12
0
0
8
4
0
- 60
1
0
I
I
- 40
D
D
= - 4.7 V
= - 4.7 A
- V
- 20
T
GS
3
J
Q
IRFD9010, SiHFD9010
, Junction Temperature (°C)
, Drain-to-Source Voltage (V)
g
, Total Gate Charge (nC)
0
20
6
V
C
C
C
40
GS
V
iss
rss
oss
DS
10
= 0 V, f = 1 MHz
= C
= C
= C
= - 40 V
60
C
C
C
gs
oss
gd
iss
rss
ds
9
+ C
80
+ C
Vishay Siliconix
For Test Circuit
See Figure 13
V
gd
100
gd
GS
, C
= - 10 V
ds
12
120
Shorted
140
www.vishay.com
160
100
15
3