IRFD9010PBF Vishay, IRFD9010PBF Datasheet - Page 5

• Manufacturer Part Number: IRFD9010PBF
• Description: MOSFET P-CH 50V 1.1A 4-DIP
• Manufacturer: Vishay
• Series: HEXFET®r

Specifications of IRFD9010PBF

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 500 mOhm @ 580mA, 10V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 1.1A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 11nC @ 10V
• Input Capacitance (ciss) @ Vds: 240pF @ 25V
• Power - Max: 1W
• Mounting Type: Through Hole
• Package / Case: 4-DIP (0.300", 7.62mm)
• Minimum Operating Temperature: - 55 C
• Resistance Drain-source Rds (on): 0.35 Ohms
• Forward Transconductance Gfs (max / Min): 2.5 S
• Drain-source Breakdown Voltage: 50 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 1.1 A
• Power Dissipation: 1 W
• Maximum Operating Temperature: + 125 C
• Mounting Style: Through Hole
• Continuous Drain Current Id: -1.1A
• Drain Source Voltage Vds: -50V
• On Resistance Rds(on): 350mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRFD9010PBF

Document Number: 91405
S10-0998-Rev. A, 26-Apr-10
Vary t
required I
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
V
I
AS
DS
1000
p
100
to obtain
0.1
10
0.00001
AS
1
R
- 10 V
g
0.05
0.02
0.01
0.5
0.2
0.1
V
DS
t
p
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
t
p
0.0001
I
AS
D.U.T
Single Pulse
(Thermal Response)
0.01 W
L
V
DS
0.001
V
+
-
DD
V
t
1
DD
, Rectangular Pulse Duration (s)
0.01
0.1
- 10 V
Fig. 13a - Basic Gate Charge Waveform
12 V
V
Fig. 13b - Gate Charge Test Circuit
V
G
GS
Same type as D.U.T.
1
Notes:
1. Duty Factor, D = t
2. Peak T
Current regulator
IRFD9010, SiHFD9010
Q
0.2 µF
GS
- 3 mA
P
J
Current sampling resistors
50 kΩ
= P
DM
Charge
DM
0.3 µF
Q
10
Q
GD
t
G
x T
1
I
G
1
thJC
t
/t
2
2
Vishay Siliconix
+ T
D.U.T.
C
I
D
100
+
-
www.vishay.com
V
DS
5