IRFD9010PBF Vishay, IRFD9010PBF Datasheet - Page 5
![MOSFET P-CH 50V 1.1A 4-DIP](/photos/5/47/54769/698-4-dip_sml.jpg)
IRFD9010PBF
Manufacturer Part Number
IRFD9010PBF
Description
MOSFET P-CH 50V 1.1A 4-DIP
Manufacturer
Vishay
Series
HEXFET®r
Specifications of IRFD9010PBF
Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
500 mOhm @ 580mA, 10V
Drain To Source Voltage (vdss)
50V
Current - Continuous Drain (id) @ 25° C
1.1A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
11nC @ 10V
Input Capacitance (ciss) @ Vds
240pF @ 25V
Power - Max
1W
Mounting Type
Through Hole
Package / Case
4-DIP (0.300", 7.62mm)
Minimum Operating Temperature
- 55 C
Resistance Drain-source Rds (on)
0.35 Ohms
Forward Transconductance Gfs (max / Min)
2.5 S
Drain-source Breakdown Voltage
50 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
1.1 A
Power Dissipation
1 W
Maximum Operating Temperature
+ 125 C
Mounting Style
Through Hole
Continuous Drain Current Id
-1.1A
Drain Source Voltage Vds
-50V
On Resistance Rds(on)
350mohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-4V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRFD9010PBF
Document Number: 91405
S10-0998-Rev. A, 26-Apr-10
Vary t
required I
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
V
I
AS
DS
1000
p
100
to obtain
0.1
10
0.00001
AS
1
R
- 10 V
g
0.05
0.02
0.01
0.5
0.2
0.1
V
DS
t
p
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
t
p
0.0001
I
AS
D.U.T
Single Pulse
(Thermal Response)
0.01 W
L
V
DS
0.001
V
+
-
DD
V
t
1
DD
, Rectangular Pulse Duration (s)
0.01
0.1
- 10 V
Fig. 13a - Basic Gate Charge Waveform
12 V
V
Fig. 13b - Gate Charge Test Circuit
V
G
GS
Same type as D.U.T.
1
Notes:
1. Duty Factor, D = t
2. Peak T
Current regulator
IRFD9010, SiHFD9010
Q
0.2 µF
GS
- 3 mA
P
J
Current sampling resistors
50 kΩ
= P
DM
Charge
DM
0.3 µF
Q
10
Q
GD
t
G
x T
1
I
G
1
thJC
t
/t
2
2
Vishay Siliconix
+ T
D.U.T.
C
I
D
100
+
-
www.vishay.com
V
DS
5