IRF9Z14 Vishay, IRF9Z14 Datasheet - Page 3

• Manufacturer Part Number: IRF9Z14
• Description: MOSFET P-CH 60V 6.7A TO-220AB
• Manufacturer: Vishay

Specifications of IRF9Z14

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 500 mOhm @ 4A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 6.7A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 270pF @ 25V
• Power - Max: 43W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -6.7A
• Drain Source Voltage Vds: -60V
• On Resistance Rds(on): 500mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -4V
• Configuration: Single
• Resistance Drain-source Rds (on): 0.5 Ohms
• Drain-source Breakdown Voltage: - 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6.7 A
• Power Dissipation: 43 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant, Contains lead / RoHS non-compliant
• Other names: *IRF9Z14

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Document Number: 91088
S11-0513-Rev. B, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
91088_01
91088_02
10
Fig. 2 - Typical Output Characteristics, T
10
10
10
Fig. 1 - Typical Output Characteristics, T
10
10
-1
-1
1
0
10
1
0
10
Bottom
-1
Top
Top
Bottom
-1
- V
- V
- 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
- 4.5 V
- 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
- 4.5 V
DS
V
V
DS ,
GS
GS
, Drain-to-Source Voltage (V)
Drain-to-Source Voltage (V)
10
10
0
0
20 µs Pulse Width
T
20 µs Pulse Width
T
C
C
=
=
25 °C
175 °C
This datasheet is subject to change without notice.
10
10
- 4.5 V
1
1
- 4.5 V
C
C
= 175 ° C
= 25 °C
91088_03
91088_04
Fig. 4 - Normalized On-Resistance vs. Temperature
10
10
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-1
0
1
- 60 - 40- 20 0 20 40 60 80 100 120 140 160 180
4
I
V
Fig. 3 - Typical Transfer Characteristics
D
GS
= - 6.7 A
= - 10 V
- V
5
T
GS ,
25
J ,
IRF9Z14, SiHF9Z14
Junction Temperature (°C)
°
Gate-to-Source Voltage (V)
C
6
7
www.vishay.com/doc?91000
175
Vishay Siliconix
°
20 µs Pulse Width
V
C
8
DS
= -
25 V
www.vishay.com
9
10
3