IRF9Z14 Vishay, IRF9Z14 Datasheet - Page 5

• Manufacturer Part Number: IRF9Z14
• Description: MOSFET P-CH 60V 6.7A TO-220AB
• Manufacturer: Vishay

Specifications of IRF9Z14

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 500 mOhm @ 4A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 6.7A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 270pF @ 25V
• Power - Max: 43W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -6.7A
• Drain Source Voltage Vds: -60V
• On Resistance Rds(on): 500mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -4V
• Configuration: Single
• Resistance Drain-source Rds (on): 0.5 Ohms
• Drain-source Breakdown Voltage: - 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6.7 A
• Power Dissipation: 43 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant, Contains lead / RoHS non-compliant
• Other names: *IRF9Z14

Document Number: 91088
S11-0513-Rev. B, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
91088_09
Fig. 9 - Maximum Drain Current vs. Case Temperature
91088_11
7.5
6.0
4.5
3.0
1.5
0.0
25
10
0.1
10
-2
1
10
-5
0.05
0.02
D = 0.5
0.2
0.1
0.01
50
T
C
, Case Temperature (°C)
75
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
10
100
-4
125
Single Pulse
(Thermal Response)
This datasheet is subject to change without notice.
150
10
t
1
-3
, Rectangular Pulse Duration (s)
175
10
-2
0.1
10 %
90 %
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
V
V
GS
DS
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
G
- 10 V
V
Notes:
1. Duty Factor, D = t
2. Peak T
t
GS
d(on)
V
IRF9Z14, SiHF9Z14
DS
t
r
1
j
= P
P
DM
DM
D.U.T.
x Z
www.vishay.com/doc?91000
t
1
1
thJC
Vishay Siliconix
/t
R
2
D
t
t
d(off)
+ T
2
C
10
t
f
-
+
www.vishay.com
V
DD
5