IRF9Z14 Vishay, IRF9Z14 Datasheet - Page 7

• Manufacturer Part Number: IRF9Z14
• Description: MOSFET P-CH 60V 6.7A TO-220AB
• Manufacturer: Vishay

Specifications of IRF9Z14

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 500 mOhm @ 4A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 6.7A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 270pF @ 25V
• Power - Max: 43W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -6.7A
• Drain Source Voltage Vds: -60V
• On Resistance Rds(on): 500mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -4V
• Configuration: Single
• Resistance Drain-source Rds (on): 0.5 Ohms
• Drain-source Breakdown Voltage: - 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6.7 A
• Power Dissipation: 43 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant, Contains lead / RoHS non-compliant
• Other names: *IRF9Z14

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91088.
Document Number: 91088
S11-0513-Rev. B, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Re-applied
voltage
Rever e
recovery
current
+
-
R
g
D.U.T.
• Compliment N-Channel of D.U.T. for driver
Note
a. V
Note
Driver gate drive
D.U.T. l
D.U.T. V
Inductor current
This datasheet is subject to change without notice.
= - 5 V for logic level and - 3 V drive device
P.W.
D
D
waveform
waveform
Peak Diode Recovery dV/dt Test Circuit
Body diode forward drop
Fig. 14 - For P-Channel
Ripple ≤ 5 %
Period
Body diode forward
+
-
• I
• dV/dt controlled by R
• D.U.T. - device under te t
current
Diode recovery
D
controlled by duty factor “D”
Circuit layout con ideration
• Low stray inductance
• round plane
• Low leakage inductance
dV/dt
current tran former
dI/dt
D =
-
g
Period
P.W.
+
I
V
V
D
IRF9Z14, SiHF9Z14
DD
= - 10 V
+
-
V
DD
a
www.vishay.com/doc?91000
Vishay Siliconix
www.vishay.com
7