IRF840ASTRLPBF Vishay, IRF840ASTRLPBF Datasheet - Page 4
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IRF840ASTRLPBF
Manufacturer Part Number
IRF840ASTRLPBF
Description
MOSFET N-CH 500V 8A D2PAK
Manufacturer
Vishay
Datasheet
1.IRF840ASPBF.pdf
(11 pages)
Specifications of IRF840ASTRLPBF
Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
850 mOhm @ 4.8A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
8A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
38nC @ 10V
Input Capacitance (ciss) @ Vds
1018pF @ 25V
Power - Max
3.1W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.85 Ohm @ 10 V
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
8 A
Power Dissipation
3100 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
8A
Drain Source Voltage Vds
500V
On Resistance Rds(on)
850mohm
Rds(on) Test Voltage Vgs
10V
Leaded Process Compatible
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
IRF840AS/LPbF
Document Number: 91066
100
0.1
10
1
0.2
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
V
T = 150 C
Drain-to-Source Voltage
SD
J
0.5
,Source-to-Drain Voltage (V)
Forward Voltage
°
0.8
T = 25 C
J
°
1.1
V
GS
= 0 V
1.4
100
0.1
20
16
12
10
8
4
0
1
Fig 8. Maximum Safe Operating Area
10
0
I =
T
T
Single Pulse
D
Fig 6. Typical Gate Charge Vs.
C
J
= 25 C
= 150 C
7.4 A
8.0
OPERATION IN THIS AREA LIMITED
Gate-to-Source Voltage
V
DS
Q , Total Gate Charge (nC)
°
°
G
10
, Drain-to-Source Voltage (V)
100
V
V
V
BY R
DS
DS
DS
= 400V
= 250V
= 100V
20
DS(on)
1 0us
1 00us
1 ms
1 0ms
FOR TEST CIRCUIT
SEE FIGURE
1000
www.vishay.com
30
13
10000
4
40