SUM110P06-07L-E3 Vishay, SUM110P06-07L-E3 Datasheet - Page 2
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SUM110P06-07L-E3
Manufacturer Part Number
SUM110P06-07L-E3
Description
MOSFET P-CH 60V 110A D2PAK
Manufacturer
Vishay
Series
TrenchFET®r
Type
Power MOSFETr
Datasheet
1.SUM110P06-07L-E3.pdf
(6 pages)
Specifications of SUM110P06-07L-E3
Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
6.9 mOhm @ 30A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
110A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
345nC @ 10V
Input Capacitance (ciss) @ Vds
11400pF @ 25V
Power - Max
3.75W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.0069 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
110 A
Power Dissipation
3750 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
-11A
Drain Source Voltage Vds
-60V
On Resistance Rds(on)
8.8mohm
Rds(on) Test Voltage Vgs
20V
Threshold Voltage Vgs Typ
-3V
Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.0069Ohm
Drain-source On-volt
60V
Gate-source Voltage (max)
±20V
Drain Current (max)
110A
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 175C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
2 +Tab
Package Type
TO-263
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SUM110P06-07L-E3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SUM110P06-07L-E3
Manufacturer:
ST
Quantity:
30 000
Company:
Part Number:
SUM110P06-07L-E3
Manufacturer:
Vishay/Siliconix
Quantity:
25 821
Part Number:
SUM110P06-07L-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
SUM110P06-07L
Vishay Siliconix
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
SPECIFICATIONS T
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Diode Ratings and Characteristics T
Continuous Current
Pulsed Current
Forward Voltage
Reverse Recovery Time
Peak Reverse Recovery Charge
Reverse Recovery Charge
c
b
c
a
c
c
c
c
c
a
a
J
= 25 °C, unless otherwise noted
a
V
I
Symbol
RM(REC)
V
r
(BR)DSS
I
DS(on)
t
t
I
C
I
C
V
GS(th)
D(on)
C
Q
Q
d(on)
d(off)
GSS
DSS
I
Q
Q
g
R
SM
I
t
oss
t
t
rss
SD
iss
S
rr
fs
gs
gd
r
f
g
rr
g
C
V
I
D
V
V
= 25 °C
V
V
DS
V
GS
GS
≅ - 110 A, V
DS
DS
GS
= - 30 V, V
= - 10 V, I
= - 10 V, I
I
= - 60 V, V
= - 60 V, V
F
V
V
V
V
= 0 V, V
V
V
V
V
V
DD
= - 85 A, di/dt = 100 A/µs
DS
DS
GS
b
I
GS
DS
GS
DS
DS
F
Test Conditions
= - 85 A, V
= V
= - 30 V, R
= - 5 V, V
= - 4.5 V, I
= 0 V, V
= 0 V, I
= - 10 V, I
= - 15 V, I
= - 60 V, V
f = 1.0 MHz
GEN
GS
DS
GS
D
D
GS
GS
= - 30 A, T
= - 30 A, T
, I
= - 25 V, f = 1 MHz
= - 10 V, I
D
= - 10 V, R
D
= 0 V, T
= 0 V, T
GS
GS
= - 250 µA
= - 250 µA
D
D
GS
D
L
GS
= ± 20 V
= - 30 A
= - 50 A
= 0.27 Ω
= - 10 V
= - 20 A
= 0 V
= 0 V
J
J
J
J
D
= 125 °C
= 175 °C
= 125 °C
= 175 °C
= - 110 A
g
= 2.5 Ω
- 120
Min.
- 60
- 1
20
0.0055
11400
0.007
1200
Typ.
- 1.0
- 4.2
0.14
900
230
160
200
240
50
60
20
65
3
S-80274-Rev. C, 11-Feb-08
Document Number: 72439
0.0069
0.0115
0.0138
0.0088
± 100
Max.
- 250
- 110
- 240
- 6.3
0.32
- 50
-1.5
345
240
300
360
100
- 3
- 1
30
Unit
nA
µA
pF
nC
µC
ns
ns
Ω
Ω
V
A
S
A
V
A