SUM110P06-07L-E3 Vishay, SUM110P06-07L-E3 Datasheet - Page 5

• Manufacturer Part Number: SUM110P06-07L-E3
• Description: MOSFET P-CH 60V 110A D2PAK
• Manufacturer: Vishay
• Series: TrenchFET®r
• Type: Power MOSFETr

Specifications of SUM110P06-07L-E3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6.9 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 110A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 345nC @ 10V
• Input Capacitance (ciss) @ Vds: 11400pF @ 25V
• Power - Max: 3.75W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.0069 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 110 A
• Power Dissipation: 3750 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -11A
• Drain Source Voltage Vds: -60V
• On Resistance Rds(on): 8.8mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: -3V
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.0069Ohm
• Drain-source On-volt: 60V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 110A
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: TO-263
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SUM110P06-07L-E3TR

THERMAL RATINGS
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
Document Number: 72439
S-80274-Rev. C, 11-Feb-08
0.01
200
150
100
0.1
50
1
0
10
0
-4
Package Limited
http://www.vishay.com/ppg?72439.
0.2
Duty Cycle = 0.5
Maximum Avalanche and Drain Current
Single Pulse
25
0.02
0.05
T
50
vs. Case Temperature
C
- Case Temperature (°C)
0.1
75
100
10
Normalized Thermal Transient Impedance, Junction-to-Case
-3
125
150
175
Square Wave Pulse Duration (s)
10
-2
1000
100
0.1
10
1
0.1
* V
Limited by r
GS
V
minimum V
DS
Single Pulse
DS on) *
Safe Operating Area
- Drain-to-Source Voltage (V)
T
C
(
1
= 25 °C
GS
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
10
DM
SUM110P06-07L
at which r
JM
-1
- T
A
t
1
= P
Vishay Siliconix
t
2
DS(on)
DM
10
Z
thJA
thJA
is specified
t
t
1
2
(t)
= 62.5 °C/W
www.vishay.com
10 µs
100 µs
1 ms
10 ms
100 ms, DC
100
1
5