IRF9630 Vishay, IRF9630 Datasheet - Page 2

• Manufacturer Part Number: IRF9630
• Description: MOSFET P-CH 200V 6.5A TO-220AB
• Manufacturer: Vishay

Specifications of IRF9630

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 800 mOhm @ 3.9A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 6.5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 29nC @ 10V
• Input Capacitance (ciss) @ Vds: 700pF @ 25V
• Power - Max: 74W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.8 Ohms
• Drain-source Breakdown Voltage: - 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6.5 A
• Power Dissipation: 74 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF9630

IRF9630, SiHF9630
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
www.vishay.com
2
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SPECIFICATIONS T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
Temperature Coefficient
J
a
= 25 °C, unless otherwise noted
SYMBOL
SYMBOL
ΔV
R
V
R
R
t
t
R
I
I
C
V
DS(on)
C
C
V
GS(th)
Q
Q
d(on)
d(off)
I
GSS
DSS
Q
Q
DS
g
L
L
t
I
SM
t
thCS
thJA
thJC
oss
t
t
on
DS
SD
iss
rss
S
rr
fs
gs
gd
D
r
f
S
rr
g
/T
J
T
Between lead,
6 mm (0.25") from
package and center of
die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
V
V
J
V
GS
GS
= 25 °C, I
DS
T
r
J
Intrinsic turn-on time is negligible (turn-on is dominated by L
Reference to 25 °C, I
G
= - 10 V
= - 10 V
= 25 °C, I
= - 160 V, V
= 12 Ω, r
V
V
V
V
V
DD
DS
f = 1.0 MHz, see fig. 5
DS
DS
TYP.
GS
0.50
TEST CONDITIONS
= - 100 V, I
-
-
= - 50 V, I
= - 200 V, V
F
= V
= 0 V, I
V
V
= - 6.5 A, dI/dt = 100 A/µs
V
GS
DS
S
D
GS
GS
= - 6.5 A, V
= 15 Ω, see fig. 10
GS
, I
= ± 20 V
= - 25 V,
= 0 V,
D
D
see fig. 6 and 13
= 0 V, T
= - 250 µA
D
= - 250 µA
V
D
I
I
= - 3.9 A
DS
D
D
GS
= - 6.5 A,
D
= - 3.9 A
= - 6.5 A,
= - 160 V,
= 0 V
= - 1 mA
GS
J
G
G
= 125 °C
= 0 V
b
b
MAX.
b
D
S
D
S
b
1.7
b
62
-
b
- 200
MIN.
- 2.0
2.8
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S-81272-Rev. B, 16-Jun-08
Document Number: 91084
- 0.24
TYP.
700
200
200
4.5
7.5
1.9
40
12
27
28
24
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
MAX.
± 100
- 100
- 500
- 4.0
0.80
- 6.5
- 6.5
S
- 26
300
5.4
2.9
29
15
-
-
-
-
-
-
-
-
-
-
-
-
and L
D
UNIT
)
V/°C
nC
nH
µC
nA
µA
pF
ns
ns
V
V
Ω
S
A
V