IRF9630 Vishay, IRF9630 Datasheet - Page 8

• Manufacturer Part Number: IRF9630
• Description: MOSFET P-CH 200V 6.5A TO-220AB
• Manufacturer: Vishay

Specifications of IRF9630

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 800 mOhm @ 3.9A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 6.5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 29nC @ 10V
• Input Capacitance (ciss) @ Vds: 700pF @ 25V
• Power - Max: 74W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.8 Ohms
• Drain-source Breakdown Voltage: - 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6.5 A
• Power Dissipation: 74 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF9630

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Vishay
Disclaimer
All product specifications and data are subject to change without notice.
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(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
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Document Number: 91000
www.vishay.com
Revision: 18-Jul-08
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