IRF9630 Vishay, IRF9630 Datasheet - Page 5

MOSFET P-CH 200V 6.5A TO-220AB

IRF9630

Manufacturer Part Number
IRF9630
Description
MOSFET P-CH 200V 6.5A TO-220AB
Manufacturer
Vishay
Datasheet

Specifications of IRF9630

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
800 mOhm @ 3.9A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
6.5A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
29nC @ 10V
Input Capacitance (ciss) @ Vds
700pF @ 25V
Power - Max
74W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.8 Ohms
Drain-source Breakdown Voltage
- 200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
6.5 A
Power Dissipation
74 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF9630

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Document Number: 91084
S-81272-Rev. B, 16-Jun-08
Vary t
required I
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 12a - Unclamped Inductive Test Circuit
p
to obtain
AS
R
- 10 V
G
V
DS
t
p
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
I
AS
D.U.T
0.01 Ω
L
A
+
-
V
DD
Fig. 12b - Unclamped Inductive Waveforms
V
10 %
90 %
I
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
AS
DS
V
V
GS
DS
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
G
- 10 V
V
t
GS
d(on)
V
DS
IRF9630, SiHF9630
t
r
t
p
D.U.T.
Vishay Siliconix
R
D
t
d(off)
V
DS
t
f
+
-
www.vishay.com
V
V
DD
DD
5

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