HUF75344G3 Fairchild Semiconductor, HUF75344G3 Datasheet

MOSFET N-CH 55V 75A TO-247

HUF75344G3

Manufacturer Part Number
HUF75344G3
Description
MOSFET N-CH 55V 75A TO-247
Manufacturer
Fairchild Semiconductor
Series
UltraFET™r
Datasheet

Specifications of HUF75344G3

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
8 mOhm @ 75A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
210nC @ 20V
Input Capacitance (ciss) @ Vds
3200pF @ 25V
Power - Max
285W
Mounting Type
Through Hole
Package / Case
TO-247-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.008 Ohm @ 10 V
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
75 A
Power Dissipation
285000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HUF75344G3
Manufacturer:
SHARP
Quantity:
2 000
Part Number:
HUF75344G3
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
75A, 55V, 0.008 Ohm, N-Channel UltraFET
Power MOSFETs
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Formerly developmental type TA75344.
Ordering Information
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-263AB variant in tape and reel, e.g., HUF75344S3ST.
Packaging
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2004 Fairchild Semiconductor Corporation
HUF75344G3
HUF75344P3
HUF75344S3S
PART NUMBER
DRAIN
(TAB)
Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html
JEDEC STYLE TO-247
TO-247
TO-220AB
TO-263AB
These N-Channel power MOSFETs
are manufactured using the
innovative UltraFET® process. This
advanced process technology
PACKAGE
Data Sheet
For severe environments, see our Automotive HUFA series.
SOURCE
75344G
75344P
75344S
DRAIN
BRAND
GATE
HUF75344G3, HUF75344P3, HUF75344S3S
SOURCE
GATE
JEDEC TO-263AB
Features
• 75A, 55V
• Simulation Models
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
Symbol
- Temperature Compensated PSPICE® and SABER™
- Thermal Impedance PSPICE and SABER Models
- TB334, “Guidelines for Soldering Surface Mount
Models
Available on the web at: www.fairchildsemi.com
Components to PC Boards”
(FLANGE)
DRAIN
December 2004
(FLANGE)
DRAIN
JEDEC TO-220AB
G
HUF75344G3, HUF75344P3, HUF75344S3S Rev. B2
D
S
SOURCE
DRAIN
GATE

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HUF75344G3 Summary of contents

Page 1

... UIS Rating Curve • Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol BRAND 75344G 75344P 75344S SOURCE DRAIN GATE JEDEC TO-263AB DRAIN GATE (FLANGE) SOURCE JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) HUF75344G3, HUF75344P3, HUF75344S3S Rev. B2 ...

Page 2

... OSS (Figure 12) C RSS Figure 4 Figure 6 285 1.90 -55 to 175 300 260 MIN TYP 150 6 125 - 30V, - 175 DD 75A 0 5.9 = 1.0mA g(REF 3200 - 1170 - 310 HUF75344G3, HUF75344P3, HUF75344S3S Rev. B2 UNITS MAX UNITS - 250 A 100 8 0. C/W 187 147 ns 210 nC 108 nC 7 ...

Page 3

... 75A, dI /dt = 100A 125 150 175 o C) FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT RECTANGULAR PULSE DURATION (s) MIN TYP MAX - - 1. 105 - - 210 50 75 100 125 150 CASE TEMPERATURE ( C) C CASE TEMPERATURE NOTES: DUTY FACTOR PEAK HUF75344G3, HUF75344P3, HUF75344S3S Rev. B2 UNITS 175 ...

Page 4

... DSS (L/R)ln[(I *R)/(1.3*RATED DSS 100 STARTING T o STARTING T = 150 0.01 0 TIME IN AVALANCHE (ms) AV 150 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX V = 15V DD 120 1 GATE TO SOURCE VOLTAGE (V) GS FIGURE 8. TRANSFER CHARACTERISTICS HUF75344G3, HUF75344P3, HUF75344S3S Rev 150 + - 7.5 ...

Page 5

... WAVEFORMS IN DESCENDING ORDER GATE CHARGE (nC 1.0 0.8 0.6 0.4 -80 - JUNCTION TEMPERATURE ( J JUNCTION TEMPERATURE 4500 C ISS 3000 C OSS 1500 C RSS DRAIN TO SOURCE VOLTAGE ( 75A 55A 35A 20A D 75 100 HUF75344G3, HUF75344P3, HUF75344S3S Rev 250 120 160 200 0V 1MHz ISS RSS OSS ...

Page 6

... FIGURE 18. SWITCHING TIME TEST CIRCUIT ©2004 Fairchild Semiconductor Corporation DUT 0. DUT g(REF DUT DSS FIGURE 15. UNCLAMPED ENERGY WAVEFORMS Q g(TOT g(10 10V g(TH FIGURE 17. GATE CHARGE WAVEFORM d(ON 90% 10% 50% PULSE WIDTH FIGURE 19. RESISTIVE SWITCHING WAVEFORMS HUF75344G3, HUF75344P3, HUF75344S3S Rev 20V GS t OFF d(OFF 90% 10% 90% 50% ...

Page 7

... DPLCAP 10 RSLC2 - 6 ESG 8 EVTHRES + - + 19 LGATE EVTEMP 8 RGATE - + RLGATE CIN S1A S2A S1B S2B EGS EDS LDRAIN 5 RLDRAIN RSLC1 DBREAK ESLC DBODY RDRAIN EBREAK MWEAK MMED MSTRO LSOURCE 8 7 RSOURCE RLSOURCE RBREAK 17 18 RVTEMP VBAT RVTHRES HUF75344G3, HUF75344P3, HUF75344S3S Rev. B2 DRAIN 2 SOURCE 3 ...

Page 8

... LGATE EVTEMP RGATE - + RLGATE S1A S2A S1B S2B EGS EDS LDRAIN 5 RLDRAIN RSLC1 RDBREAK 51 72 RDBODY ISCL DBREAK 50 71 RDRAIN MWEAK 8 DBODY EBREAK MMED + MSTRO 17 18 LSOURCE - CIN 8 7 RSOURCE RLSOURCE RBREAK RVTEMP VBAT RVTHRES HUF75344G3, HUF75344P3, HUF75344S3S Rev. B2 DRAIN 2 SOURCE 3 ...

Page 9

... Fairchild Semiconductor Corporation JUNCTION th RTHERM1 CTHERM1 6 RTHERM2 CTHERM2 5 RTHERM3 CTHERM3 4 RTHERM4 CTHERM4 3 RTHERM5 CTHERM5 2 RTHERM6 CTHERM6 tl CASE HUF75344G3, HUF75344P3, HUF75344S3S Rev. B2 ...

Page 10

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ ...

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