HUF75344G3 Fairchild Semiconductor, HUF75344G3 Datasheet - Page 9

• Manufacturer Part Number: HUF75344G3
• Description: MOSFET N-CH 55V 75A TO-247
• Manufacturer: Fairchild Semiconductor
• Series: UltraFET™r

Specifications of HUF75344G3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 8 mOhm @ 75A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 210nC @ 20V
• Input Capacitance (ciss) @ Vds: 3200pF @ 25V
• Power - Max: 285W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.008 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 75 A
• Power Dissipation: 285000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SPICE Thermal Model
REV 5 February 1999
HUF75344
CTHERM1 th 6 5.0e-3
CTHERM2 6 5 1.0e-2
CTHERM3 5 4 1.3e-2
CTHERM4 4 3 1.5e-2
CTHERM5 3 2 2.2e-2
CTHERM6 2 tl 8.5e-2
RTHERM1 th 6 6.0e-4
RTHERM2 6 5 3.5e-3
RTHERM3 5 4 2.5e-2
RTHERM4 4 3 4.8e-2
RTHERM5 3 2 1.6e-1
RTHERM6 2 tl 1.8e-1
SABER Thermal Model
SABER thermal model HUF75344
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 6 = 5.0e-3
ctherm.ctherm2 6 5 = 1.0e-2
ctherm.ctherm3 5 4 = 1.3e-2
ctherm.ctherm4 4 3 = 1.5e-2
ctherm.ctherm5 3 2 = 2.2e-2
ctherm.ctherm6 2 tl = 5.5e-2
rtherm.rtherm1 th 6 = 6.0e-4
rtherm.rtherm2 6 5 = 3.5e-3
rtherm.rtherm3 5 4 = 2.5e-2
rtherm.rtherm4 4 3 = 4.8e-2
rtherm.rtherm5 3 2 = 1.6e-1
rtherm.rtherm6 2 tl = 1.8e-1
}
©2004 Fairchild Semiconductor Corporation
RTHERM5
RTHERM2
RTHERM6
RTHERM1
RTHERM3
RTHERM4
th
tl
5
4
3
2
6
JUNCTION
CASE
HUF75344G3, HUF75344P3, HUF75344S3S Rev. B2
CTHERM5
CTHERM2
CTHERM1
CTHERM3
CTHERM4
CTHERM6