FQA28N50F Fairchild Semiconductor, FQA28N50F Datasheet

MOSFET N-CH 500V 28.4A TO-3P

FQA28N50F

Manufacturer Part Number
FQA28N50F
Description
MOSFET N-CH 500V 28.4A TO-3P
Manufacturer
Fairchild Semiconductor
Series
FRFET™r
Datasheet

Specifications of FQA28N50F

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
160 mOhm @ 14.2A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
28.4A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
140nC @ 10V
Input Capacitance (ciss) @ Vds
5600pF @ 25V
Power - Max
310W
Mounting Type
Through Hole
Package / Case
TO-3PN-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.16 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
28 S
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
28.4 A
Power Dissipation
310000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FQA28N50F
Manufacturer:
FSC
Quantity:
86 755
©2001 Fairchild Semiconductor Corporation
FQA28N50F
500V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies,
where the body diode is used such as phase-shift ZVS,
basic full-bridge topology.
Absolute Maximum Ratings
Thermal Characteristics
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J
L
Symbol
DSS
GSS
AS
AR
D
Symbol
, T
JC
CS
JA
STG
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
G
D
S
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
C
Parameter
= 25°C)
Parameter
T
C
FQA Series
C
C
= 25°C unless otherwise noted
TO-3PN
= 25°C)
= 100°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Features
• 28.4A, 500V, R
• Low gate charge ( typical 110 nC)
• Low Crss ( typical 60 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Fast recovery body diode ( max, 250ns )
G
!
!
0.24
Typ
DS(on)
--
--
! "
! "
FQA28N50F
-55 to +150
!
!
!
!
S
D
"
"
"
"
"
"
= 0.16
113.6
1300
28.4
28.4
310
300
500
2.5
18
31
17
30
FRFET
@V
Max
0.4
40
--
GS
September 2001
= 10 V
Rev. A2, September 2001
Units
W/°C
Units
°C/W
°C/W
°C/W
V/ns
mJ
mJ
°C
°C
W
V
A
A
A
V
A
TM

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FQA28N50F Summary of contents

Page 1

... C Parameter September 2001 FRFET = 0. DS(on " " ! " ! " " " " " FQA28N50F Units 500 28.4 18 113.6 30 1300 mJ 28 V/ns 310 2.5 W/°C -55 to +150 300 Typ Max Units -- 0.4 °C/W 0.24 -- °C °C/W Rev ...

Page 2

... Repetitive Rating : Pulse width limited by maximum junction temperature 2.9mH 28.4A 50V ≤ 28.4A, di/dt ≤ 350A ≤ DSS, 4. Pulse Test : Pulse width ≤ 300 s, Duty cycle ≤ Essentially independent of operating temperature ©2001 Fairchild Semiconductor Corporation T = 25°C unless otherwise noted C Test Conditions 250 250 A, Referenced to 25° 500 ...

Page 3

... I , Drain Current [A] D Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage 9000 7500 C iss 6000 C oss 4500 3000 C rss 1500 Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2001 Fairchild Semiconductor Corporation ※ Notes : 1. 250μ s Pulse Test 25℃ 10V ※ Note : T = 25℃ ...

Page 4

... ※ Notes : 150 Single Pulse - Drain-Source Voltage [V] DS Figure 9. Maximum Safe Operating Area ©2001 Fairchild Semiconductor Corporation (Continued) 3.0 2.5 2.0 1.5 1.0 ※ Notes : 250 μ 0.5 D 0.0 100 150 200 -100 o C] Figure 8. On-Resistance Variation 100 Figure 10. Maximum Drain Current ※ ...

Page 5

... Resistive Switching Test Circuit & Waveforms 10V 10V Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V ©2001 Fairchild Semiconductor Corporation Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V DUT DUT 10% 10 DUT DUT ...

Page 6

... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2001 Fairchild Semiconductor Corporation + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period ...

Page 7

... Mechanical Dimensions ©2001 Fairchild Semiconductor Corporation TO-3PN Dimensions in Millimeters Rev. A2, September 2001 ...

Page 8

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DenseTrench™ GTO™ ...

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