FQA28N50F Fairchild Semiconductor, FQA28N50F Datasheet - Page 4

• Manufacturer Part Number: FQA28N50F
• Description: MOSFET N-CH 500V 28.4A TO-3P
• Manufacturer: Fairchild Semiconductor
• Series: FRFET™r

Specifications of FQA28N50F

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 160 mOhm @ 14.2A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 28.4A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 140nC @ 10V
• Input Capacitance (ciss) @ Vds: 5600pF @ 25V
• Power - Max: 310W
• Mounting Type: Through Hole
• Package / Case: TO-3PN-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.16 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 28 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 28.4 A
• Power Dissipation: 310000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2001 Fairchild Semiconductor Corporation
Typical Characteristics
1.2
1.1
1.0
0.9
0.8
10
10
10
10
-100
Figure 9. Maximum Safe Operating Area
-1
2
1
0
10
Figure 7. Breakdown Voltage Variation
0
-50
T
Operation in This Area
is Limited by R
V
vs Temperature
J
DS
, Junction Temperature [
10
0
, Drain-Source Voltage [V]
1 0
1 0
※ Notes :
1
1. T
2. T
3. Single Pulse
- 1
- 2
1 0
C
J
= 150
= 25
DS(on)
- 5
D = 0 . 5
0 .0 2
o
0 .0 5
0 .0 1
C
50
o
0 .1
C
0 .2
DC
10 ms
Figure 11. Transient Thermal Response Curve
100
10
1 0
(Continued)
1 ms
2
o
C]
- 4
s in g le p u ls e
100 s
※ Notes :
t
1. V
2. I
1
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
D
G S
= 250 μ A
150
10 s
= 0 V
1 0
- 3
200
10
3
1 0
- 2
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
30
25
20
15
10
5
0
25
Figure 8. On-Resistance Variation
※ N o te s :
Figure 10. Maximum Drain Current
1 0
1 . Z
2 . D u ty F a c t o r , D = t
3 . T
- 1
P
-50
DM
θ J C
J M
50
- T
( t ) = 0 . 4 ℃ /W M a x .
C
vs Case Temperature
= P
T
J
T
t
vs Temperature
, Junction Temperature [
1
C
0
D M
t
, Case Temperature [ ℃ ]
1 0
2
* Z
0
75
1
/t
θ J C
2
( t )
50
100
1 0
1
100
o
C]
125
※ Notes :
1. V
2. I
150
D
GS
= 14.2 A
Rev. A2, September 2001
= 10 V
150
200