FQA28N50F Fairchild Semiconductor, FQA28N50F Datasheet - Page 3

• Manufacturer Part Number: FQA28N50F
• Description: MOSFET N-CH 500V 28.4A TO-3P
• Manufacturer: Fairchild Semiconductor
• Series: FRFET™r

Specifications of FQA28N50F

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 160 mOhm @ 14.2A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 28.4A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 140nC @ 10V
• Input Capacitance (ciss) @ Vds: 5600pF @ 25V
• Power - Max: 310W
• Mounting Type: Through Hole
• Package / Case: TO-3PN-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.16 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 28 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 28.4 A
• Power Dissipation: 310000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2001 Fairchild Semiconductor Corporation
Typical Characteristics
9000
7500
6000
4500
3000
1500
10
10
10
0.5
0.4
0.3
0.2
0.1
0.0
0
2
1
0
10
10
0
-1
-1
Figure 5. Capacitance Characteristics
Top :
Bottom : 5.5 V
Figure 3. On-Resistance Variation vs
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
20
V
GS
40
V
V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
I
D
10
10
, Drain Current [A]
0
0
60
C
C
C
oss
rss
iss
V
GS
= 20V
80
V
GS
C
C
C
= 10V
iss
oss
rss
100
※ Notes :
= C
= C
= C
1. 250μ s Pulse Test
2. T
10
10
※ Note : T
gs
gd
ds
1
C
1
+ C
+ C
= 25℃
gd
※ Notes :
gd
(C
1. V
2. f = 1 MHz
120
ds
J
GS
= shorted)
= 25℃
= 0 V
140
10
10
10
10
10
10
10
10
12
10
-1
-1
2
1
0
2
1
0
8
6
4
2
0
0.2
2
0
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
Figure 2. Transfer Characteristics
Variation with Source Current
0.4
150℃
20
4
150℃
25℃
V
V
GS
and Temperature
SD
Q
0.6
40
G
25℃
, Gate-Source Voltage [V]
, Source-Drain Voltage [V]
, Total Gate Charge [nC]
V
V
DS
0.8
DS
60
V
6
= 400V
DS
= 250V
= 100V
-55℃
1.0
80
※ Notes :
※ Notes :
1. V
2. 250μ s Pulse Test
1. V
2. 250μ s Pulse Test
※ Note : I
8
DS
GS
= 50V
= 0V
100
1.2
D
= 28.4 A
Rev. A2, September 2001
120
1.4
10