HUF75852G3 Fairchild Semiconductor, HUF75852G3 Datasheet - Page 4

• Manufacturer Part Number: HUF75852G3
• Description: MOSFET N-CH 150V 75A TO-247
• Manufacturer: Fairchild Semiconductor
• Series: UltraFET™r

Specifications of HUF75852G3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 16 mOhm @ 75A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 480nC @ 20V
• Input Capacitance (ciss) @ Vds: 7690pF @ 25V
• Power - Max: 500W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.016 Ohms
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 75 A
• Power Dissipation: 500 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curves
©2001 Fairchild Semiconductor Corporation
1000
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
200
150
100
100
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
50
10
0
2.8
2.2
1.6
1.0
0.4
1
2
1
-80
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
V
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
FIGURE 7. TRANSFER CHARACTERISTICS
DD
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
= 15V
RESISTANCE vs JUNCTION TEMPERATURE
-40
V
V
DS
T
GS
J
3
, DRAIN TO SOURCE VOLTAGE (V)
DS(ON)
, JUNCTION TEMPERATURE (
, GATE TO SOURCE VOLTAGE (V)
0
T
10
J
= 175
40
SINGLE PULSE
T
T
J
C
o
= MAX RATED
= 25
C
4
o
80
C
T
J
= -55
V
GS
(Continued)
T
120
100
o
= 10V, I
J
C
o
= 25
5
C)
o
C
D
160
100 s
1ms
10ms
= 75A
500
200
6
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
1000
200
150
100
100
50
10
0
0.01
1.2
1.0
0.8
0.6
0.4
0
-80
FIGURE 8. SATURATION CHARACTERISTICS
STARTING T
JUNCTION TEMPERATURE
-40
1
If R = 0
t
If R
t
V
AV
AV
V
GS
DS
T
= (L)(I
= (L/R)ln[(I
J
t
= 20V
, JUNCTION TEMPERATURE (
J
AV
0
, DRAIN TO SOURCE VOLTAGE (V)
= 150
0
, TIME IN AVALANCHE (ms)
0.1
AS
2
)/(1.3*RATED BV
o
C
AS
40
*R)/(1.3*RATED BV
3
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
T
C
80
= 25
V
STARTING T
GS
DSS
1
o
4
= V
V
V
V
C
120
GS
GS
GS
- V
DS
o
DSS
DD
HUF75852G3 Rev. B
= 10V
= 7V
= 6V
C)
, I
V
D
GS
J
)
= 25
160
- V
= 250 A
5
=5V
DD
o
C
) +1]
200
10
6