HUF75852G3 Fairchild Semiconductor, HUF75852G3 Datasheet - Page 6

• Manufacturer Part Number: HUF75852G3
• Description: MOSFET N-CH 150V 75A TO-247
• Manufacturer: Fairchild Semiconductor
• Series: UltraFET™r

Specifications of HUF75852G3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 16 mOhm @ 75A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 480nC @ 20V
• Input Capacitance (ciss) @ Vds: 7690pF @ 25V
• Power - Max: 500W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.016 Ohms
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 75 A
• Power Dissipation: 500 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Test Circuits and Waveforms
©2001 Fairchild Semiconductor Corporation
VARY t
REQUIRED PEAK I
0V
V
GS
I
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
g(REF)
P
FIGURE 18. SWITCHING TIME TEST CIRCUIT
TO OBTAIN
FIGURE 16. GATE CHARGE TEST CIRCUIT
V
t
GS
P
V
AS
GS
R
GS
R
V
G
GS
V
DS
V
DUT
DS
V
R
I
DS
AS
L
DUT
R
DUT
L
0.01
L
-
+
V
DD
+
-
+
-
V
V
DD
DD
I
V
g(REF)
0
0
DD
V
0
0
0
V
V
GS
DS
GS
10%
V
= 2V
GS
FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
FIGURE 19. SWITCHING TIME WAVEFORM
FIGURE 17. GATE CHARGE WAVEFORMS
Q
t
d(ON)
90%
Q
gs
g(TH)
50%
t
ON
10%
t
r
I
AS
Q
PULSE WIDTH
Q
V
g(10)
DS
gd
t
P
Q
g(TOT)
BV
t
AV
DSS
V
GS
= 10V
t
d(OFF)
90%
V
t
OFF
HUF75852G3 Rev. B
DS
50%
t
f
10%
V
GS
V
90%
DD
= 20V