IRFP460APBF Vishay, IRFP460APBF Datasheet - Page 4
![MOSFET N-CH 500V 20A TO-247AC](/photos/5/40/54088/to-247ac_sml.jpg)
IRFP460APBF
Manufacturer Part Number
IRFP460APBF
Description
MOSFET N-CH 500V 20A TO-247AC
Manufacturer
Vishay
Type
Power MOSFETr
Specifications of IRFP460APBF
Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
270 mOhm @ 12A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
20A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
105nC @ 10V
Input Capacitance (ciss) @ Vds
3100pF @ 25V
Power - Max
280W
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Gate Charge Qg
105 nC
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.27 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
11 S
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
20 A
Power Dissipation
280000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Continuous Drain Current Id
20A
Drain Source Voltage Vds
500V
On Resistance Rds(on)
270mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.27Ohm
Drain-source On-volt
500V
Gate-source Voltage (max)
±30V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Package Type
TO-247AC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRFP460APBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFP460APBF
Manufacturer:
HITACHI
Quantity:
1 000
Company:
Part Number:
IRFP460APBF
Manufacturer:
IR
Quantity:
1 500
Part Number:
IRFP460APBF
Manufacturer:
IR
Quantity:
20 000
IRFP460A, SiHFP460A
Vishay Siliconix
www.vishay.com
4
91234_05
91234_06
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
10
10
10
10
10
20
16
12
1
8
4
0
5
4
3
2
1
0
I
D
= 20 A
V
DS ,
20
Q
G
Drain-to-Source Voltage (V)
, Total Gate Charge (nC)
V
10
DS
40
= 100 V
V
C
C
C
GS
iss
rss
oss
V
= 0 V, f = 1 MHz
= C
= C
DS
= C
= 250 V
gs
gd
60
ds
+ C
+ C
10
V
DS
gd
2
gd
For test circuit
see figure 13
, C
= 400 V
80
ds
Shorted
C
C
C
oss
iss
rss
100
10
3
91234_07
91234_08
Fig. 7 - Typical Source-Drain Diode Forward Voltage
10
0.1
10
10
10
10
1
1
2
3
2
0.2
10
T
T
Single Pulse
Fig. 8 - Maximum Safe Operating Area
C
J
Operation in this area limited
= 150 °C
= 25 °C
0.4
V
V
SD
DS
150
, Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
0.6
by R
°
C
10
DS(on)
2
0.8
25
°
1.0
C
100
1
10
10
S09-1284-Rev. B, 13-Jul-09
ms
Document Number: 91234
10
µs
ms
µs
1.2
3
V
GS
1.4
= 0 V
10
1.6
4