IRFP460APBF Vishay, IRFP460APBF Datasheet - Page 8

MOSFET N-CH 500V 20A TO-247AC

IRFP460APBF

Manufacturer Part Number
IRFP460APBF
Description
MOSFET N-CH 500V 20A TO-247AC
Manufacturer
Vishay
Type
Power MOSFETr
Datasheets

Specifications of IRFP460APBF

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
270 mOhm @ 12A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
20A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
105nC @ 10V
Input Capacitance (ciss) @ Vds
3100pF @ 25V
Power - Max
280W
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Gate Charge Qg
105 nC
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.27 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
11 S
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
20 A
Power Dissipation
280000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Continuous Drain Current Id
20A
Drain Source Voltage Vds
500V
On Resistance Rds(on)
270mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.27Ohm
Drain-source On-volt
500V
Gate-source Voltage (max)
±30V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Package Type
TO-247AC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRFP460APBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFP460APBF
Manufacturer:
HITACHI
Quantity:
1 000
Part Number:
IRFP460APBF
Manufacturer:
IR
Quantity:
1 500
Part Number:
IRFP460APBF
Manufacturer:
VISHAY
Quantity:
150
Part Number:
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Manufacturer:
IR
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Part Number:
IRFP460APBF
0
Company:
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Document Number: 91234
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IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
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Notes:
Repetitive rating; pulse width limited by
R
I
max. junction temperature. ( See fig. 11 )
Starting T
T
SD
G
J
≤ 150°C
= 25Ω, I
≤ 20A, di/dt ≤ 125A/µs, V
20.30 (.800)
19.70 (.775)
14.80 (.583)
14.20 (.559)
5.45 (.215)
2.40 (.094)
2.00 (.079)
J
2X
2X
= 25°C, L = 4.3mH
AS
= 20A. (See Figure 12)
EXAMPLE:
1
15.90 (.626)
15.30 (.602)
- B -
2
T HIS IS AN IRFPE30
WIT H ASSEMBLY
LOT CODE 5657
ASSEMBLED ON WW 35, 2000
IN THE AS SEMBLY LINE "H"
Note: "P" in assembly line
position indicates "Lead-Free"
DD
3.40 (.133)
3.00 (.118)
3
≤ V
3X
(BR)DSS
0.25 (.010) M
1.40 (.056)
1.00 (.039)
- A -
4.30 (.170)
3.70 (.145)
2X
- C -
5.50 (.217)
0.25 (.010)
,
3.65 (.143)
3.55 (.140)
5.50 (.217)
4.50 (.177)
C A S
M
Pulse width ≤ 300µs; duty cycle ≤ 2%.
C
Data and specifications subject to change without notice.
as C
oss
D
INT ERNATIONAL
RECT IFIER
B
ASSEMBLY
LOT CODE
oss
eff. is a fixed capacitance that gives the same charging time
LOGO
M
while V
DS
- D -
is rising from 0 to 80% V
56
IRFPE30
3X
2.60 (.102)
2.20 (.087)
2.50 (.089)
1.50 (.059)
035H
5.30 (.209)
4.70 (.185)
57
0.80 (.031)
0.40 (.016)
4
NOTES:
1 DIMENSIONING & TOLERANCING
2 CONTROLLING DIMENSION : INCH.
3 CONFORMS TO JEDEC OUTLINE
PER ANSI Y14.5M, 1982.
TO-247-AC.
PART NUMBER
DAT E CODE
YEAR 0 = 2000
WEEK 35
LINE H
Hexfet
1 - Gate
2 - Drain
3 - Source
4 - Drain
LEAD ASSIGNMENTS
TAC Fax: (310) 252-7903
LEAD ASSIGNMENTS
1 - GATE
2 - DRAIN
3 - SOURCE
4 - DRAIN
DSS
IGBT
1 - Gate
2 - Collector
3 - Emitter
4 - Collector
www.vishay.com
11/03
8

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