IRFP460A Vishay, IRFP460A Datasheet - Page 3

• Manufacturer Part Number: IRFP460A
• Description: MOSFET N-CH 500V 20A TO-247AC
• Manufacturer: Vishay

Specifications of IRFP460A

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 270 mOhm @ 12A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 105nC @ 10V
• Input Capacitance (ciss) @ Vds: 3100pF @ 25V
• Power - Max: 280W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.27 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 20 A
• Power Dissipation: 280 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFP460A

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 91234
S-81360-Rev. A, 28-Jul-08
91234_01
91234_02
10
10
0.1
10
10
1
1
2
2
0.1
1
Top
Bottom
Top
Bottom
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Output Characteristics
V
V
DS ,
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
V
15 V
10 V
DS
V
15 V
10 V
GS
GS
, Drain-to-Source Voltage (V)
Drain-to-Source Voltage (V)
1
10
20 µs Pulse Width
T
20 µs Pulse Width
T
10
C
C
=
=
25 °C
150 °C
4.5 V
4.5 V
10
10
2
2
91234_04
91234_03
Fig. 4 - Normalized On-Resistance vs. Temperature
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.1
10
1
- 60 - 40 - 20
2
4.0
I
V
Fig. 3 - Typical Transfer Characteristics
D
GS
= 20 A
IRFP460A, SiHFP460A
= 10 V
150
V
5.0
GS ,
T
°
J ,
C
0
Gate-to-Source Voltage (V)
Junction Temperature (°C)
25
20 40 60 80 100 120 140 160
6.0
°
C
Vishay Siliconix
7.0
20 µs Pulse Width
V
DS
=
50 V
8.0
www.vishay.com
9.0
3