IRFP460A Vishay, IRFP460A Datasheet - Page 4

• Manufacturer Part Number: IRFP460A
• Description: MOSFET N-CH 500V 20A TO-247AC
• Manufacturer: Vishay

Specifications of IRFP460A

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 270 mOhm @ 12A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 105nC @ 10V
• Input Capacitance (ciss) @ Vds: 3100pF @ 25V
• Power - Max: 280W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.27 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 20 A
• Power Dissipation: 280 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFP460A

IRFP460A, SiHFP460A
Vishay Siliconix
www.vishay.com
4
91234_05
91234_06
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
10
10
10
10
10
20
16
12
1
8
4
0
5
4
3
2
1
0
I
D
= 20 A
V
DS ,
20
Q
G
Drain-to-Source Voltage (V)
, Total Gate Charge (nC)
V
10
DS
40
= 100 V
V
C
C
C
GS
iss
rss
oss
V
= 0 V, f = 1 MHz
= C
= C
DS
= C
= 250 V
gs
gd
60
ds
+ C
+ C
10
V
DS
gd
2
gd
For test circuit
see figure 13
, C
= 400 V
80
ds
Shorted
C
C
C
oss
iss
rss
100
10
3
91234_07
91234_08
Fig. 7 - Typical Source-Drain Diode Forward Voltage
10
0.1
10
10
10
10
1
1
2
3
2
0.2
10
T
T
Single Pulse
Fig. 8 - Maximum Safe Operating Area
C
J
Operation in this area limited
= 150 °C
= 25 °C
0.4
V
V
SD
DS
150
, Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
0.6
by R
°
C
10
DS(on)
2
0.8
25
°
1.0
C
100
1
10
10
ms
Document Number: 91234
S-81360-Rev. A, 28-Jul-08
10
µs
ms
µs
1.2
3
V
GS
1.4
= 0 V
10
1.6
4