IRFP460A Vishay, IRFP460A Datasheet - Page 5

MOSFET N-CH 500V 20A TO-247AC

IRFP460A

Manufacturer Part Number
IRFP460A
Description
MOSFET N-CH 500V 20A TO-247AC
Manufacturer
Vishay
Datasheet

Specifications of IRFP460A

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
270 mOhm @ 12A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
20A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
105nC @ 10V
Input Capacitance (ciss) @ Vds
3100pF @ 25V
Power - Max
280W
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.27 Ohms
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
20 A
Power Dissipation
280 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRFP460A

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Document Number: 91234
S-81360-Rev. A, 28-Jul-08
91234_09
Fig. 9 - Maximum Drain Current vs. Case Temperature
91234_11
20
15
10
Fig. 12a - Unclamped Inductive Test Circuit
5
0
25
R
20 V
G
V
10
10
0.1
DS
-2
-3
1
10
T
t
p
C
-5
50
0.05
0.02
0.01
0 − 0.5
0.2
0.1
, Case Temperature (°C)
I
AS
D.U.T.
0.01 Ω
L
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
75
100
10
-4
Single Pulse
(Thermal Response)
15 V
Driver
125
+
- V
DD
t
A
1
150
, Rectangular Pulse Duration (S)
10
-3
10
-2
Fig. 12b - Unclamped Inductive Waveforms
I
90 %
10 %
AS
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
V
V
DS
GS
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
G
IRFP460A, SiHFP460A
10 V
V
GS
t
Notes:
1. Duty Factor, D = t
2. Peak T
d(on)
V
0.1
DS
t
r
j
= P
t
P
p
DM
DM
D.U.T.
x Z
t
1
Vishay Siliconix
R
1
thJC
/t
D
2
t
d(off)
V
t
+ T
2
DS
C
1
t
f
+
-
www.vishay.com
V
DD
5

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