IRFP32N50KPBF Vishay, IRFP32N50KPBF Datasheet
IRFP32N50KPBF
Specifications of IRFP32N50KPBF
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IRFP32N50KPBF Summary of contents
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... Repetitive Avalanche Energy AR Thermal Resistance Symbol Parameter R Junction-to-Case θJC R Case-to-Sink, Flat, Greased Surface θCS R Junction-to-Ambient θJA Document Number: 91221 IRFP32N50KPbF SMPS MOSFET HEXFET Power MOSFET V DSS 500V @ 10V GS @ 10V GS - 150 Typ. ––– ––– ––– ...
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... G = 10V „ 25V DS pF ƒ = 1.0MHz, See Fig 0V 1.0V, ƒ = 1.0MHz 0V 400V, ƒ = 1.0MHz 0V 400V … Conditions MOSFET symbol showing the A integral reverse G p-n junction diode 25° 32A „ 25° 32A J F µC di/dt = 100A/µs „ DSS www.vishay.com ...
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... Fig 2. Typical Output Characteristics 3 2.5 2.0 1.5 1.0 0.5 = 50V 0 -60 -40 -20 Fig 4. Normalized On-Resistance VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 20µs PULSE WIDTH Tj = 150° Drain-to-Source Voltage (V) 32A V = 10V 100 120 140 160 ° Junction Temperature ( C) J Vs. Temperature www.vishay.com 100 3 ...
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... OPERATION IN THIS AREA LIMITED 100 ° 150 Single Pulse GS 1 1.3 1.6 10 Fig 8. Maximum Safe Operating Area 32A V = 400V 250V 100V 120 160 Q , Total Gate Charge (nC) G Gate-to-Source Voltage BY R DS(on) 10us 100us 1ms ° 10ms 100 1000 V , Drain-to-Source Voltage (V) DS www.vishay.com 200 10000 4 ...
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... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91221 Fig 10a. Switching Time Test Circuit V DS 90% 125 150 ° 10 d(on) Fig 10b. Switching Time Waveforms Notes: 1. Duty factor Peak 0.001 0. Rectangular Pulse Duration (sec ≤ 1 ≤ 0 d(off thJC C 0.1 1 www.vishay.com 5 ...
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... Fig 13a. Gate Charge Test Circuit Document Number: 91221 I D TOP 14A 20A BOTTOM 32A 20V Fig 12c. Unclamped Inductive Test Circuit 125 150 ° Fig 12d. Unclamped Inductive Waveforms Fig 13b. Basic Gate Charge Waveform 15V DRIVER L D.U 0.01 Ω (BR)DSS Charge www.vishay.com A 6 ...
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... Inductor Curent Fig 14. For N-Channel HEXFET Document Number: 91221 + • • ƒ • - „ - • • • • P.W. Period D = Period Waveform Body Diode Forward Current di/dt Waveform Diode Recovery dv/dt Body Diode Forward Drop Ripple ≤ 5% ® Power MOSFETs + + - V =10V www.vishay.com 7 ...
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... CONTROLLING DIMENSION : INCH. 3 CONFORMS TO JEDEC OUTLINE TO-247-AC. LEAD ASSIGNMENTS Hexfet IGBT LEAD ASSIGNMENTS 1 - Gate 1 - Gate 0.80 (.031 Drain 1 - GATE 2 - Collector 0.40 (.016 DRAIN 3 - Source 3 - Emitter 3 - SOURCE 4 - Drain 4 - Collector 4 - DRAIN PART NUMBER 57 DAT E CODE YEAR 0 = 2000 WEEK 35 LINE H TAC Fax: (310) 252-7903 www.vishay.com 8 ...
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... Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. ...