IRFP32N50KPBF Vishay, IRFP32N50KPBF Datasheet - Page 7
![MOSFET N-CH 500V 32A TO-247AC](/photos/5/40/54088/to-247ac_sml.jpg)
IRFP32N50KPBF
Manufacturer Part Number
IRFP32N50KPBF
Description
MOSFET N-CH 500V 32A TO-247AC
Manufacturer
Vishay
Type
Power MOSFETr
Specifications of IRFP32N50KPBF
Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
160 mOhm @ 32A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
32A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
190nC @ 10V
Input Capacitance (ciss) @ Vds
5280pF @ 25V
Power - Max
460W
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.16 Ohm @ 10 V
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
32 A
Power Dissipation
460000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Continuous Drain Current Id
32A
Drain Source Voltage Vds
500V
On Resistance Rds(on)
160mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
5V
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.16Ohm
Drain-source On-volt
500V
Gate-source Voltage (max)
±30V
Drain Current (max)
32A
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Package Type
TO-247AC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRFP32N50KPBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFP32N50KPBF
Manufacturer:
IR
Quantity:
20 000
Document Number: 91221
Re-Applied
Voltage
Reverse
Recovery
Current
+
-
D.U.T
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
Fig 14. For N-Channel HEXFET
P.W.
SD
DS
Waveform
Waveform
Ripple ≤ 5%
Body Diode
Period
Body Diode Forward
+
-
•
•
•
•
Diode Recovery
Current
dv/dt
Forward Drop
•
•
•
di/dt
D =
-
®
Power MOSFETs
Period
P.W.
+
V
V
I
SD
GS
DD
=10V
+
-
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