IRFP32N50KPBF Vishay, IRFP32N50KPBF Datasheet - Page 4

• Manufacturer Part Number: IRFP32N50KPBF
• Description: MOSFET N-CH 500V 32A TO-247AC
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of IRFP32N50KPBF

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 160 mOhm @ 32A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 32A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 190nC @ 10V
• Input Capacitance (ciss) @ Vds: 5280pF @ 25V
• Power - Max: 460W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.16 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 32 A
• Power Dissipation: 460000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Continuous Drain Current Id: 32A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 160mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 5V
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.16Ohm
• Drain-source On-volt: 500V
• Gate-source Voltage (max): ±30V
• Drain Current (max): 32A
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-247AC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRFP32N50KPBF

Document Number: 91221
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10
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Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
1
Drain-to-Source Voltage
T = 150 C
V
J
SD
0.6
V DS , Drain-to-Source Voltage (V)
,Source-to-Drain Voltage (V)
Forward Voltage
V GS = 0V,
C iss
C rss
C oss = C ds + C gd
°
10
= C gd
= C gs + C gd , C ds
T = 25 C
0.9
J
Crss
Ciss
Coss
°
f = 1 MHZ
1.3
100
V
GS
= 0 V
SHORTED
1.6
1000
1000
100
20
16
12
Fig 8. Maximum Safe Operating Area
10
8
4
0
1
0
10
Fig 6. Typical Gate Charge Vs.
I =
D
T
T
Single Pulse
C
J
= 25 C °
= 150 C
OPERATION IN THIS AREA LIMITED
32A
Gate-to-Source Voltage
V
DS
40
Q , Total Gate Charge (nC)
°
G
, Drain-to-Source Voltage (V)
100
80
BY R
V
V
V
DS(on)
DS
DS
DS
120
10us
100us
1ms
10ms
= 400V
= 250V
= 100V
1000
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160
10000
200
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