PMBF170,235 NXP Semiconductors, PMBF170,235 Datasheet - Page 10

• Manufacturer Part Number: PMBF170,235
• Description: MOSFET N-CH TRENCH 60V SOT-23
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PMBF170,235

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 300mA
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 40pF @ 10V
• Power - Max: 830mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 933966340235

10. Revision history
Table 6:
Philips Semiconductors
9397 750 07208
Product specification
Rev Date
03
02
01
20000622
19970623
19901031
Revision history
CPCN
HZG303
-
-
Description
Product specification; third version; supersedes PMBF170_CNV_2 of 970623.
Converted from VDMOS (Nijmegen) to TrenchMOS™ technology (Hazel Grove).
Product specification; second version.
Product specification; initial version.
Rev. 03 — 23 June 2000
N-channel enhancement mode field-effect transistor
© Philips Electronics N.V. 2000. All rights reserved.
PMBF170
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