PMBF170,235 NXP Semiconductors, PMBF170,235 Datasheet - Page 13

MOSFET N-CH TRENCH 60V SOT-23

PMBF170,235

Manufacturer Part Number
PMBF170,235
Description
MOSFET N-CH TRENCH 60V SOT-23
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet

Specifications of PMBF170,235

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
5 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
300mA
Vgs(th) (max) @ Id
2V @ 1mA
Input Capacitance (ciss) @ Vds
40pF @ 10V
Power - Max
830mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
933966340235
Philips Semiconductors
Contents
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© Philips Electronics N.V. 2000.
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner.
The information presented in this document does not form part of any quotation or
contract, is believed to be accurate and reliable and may be changed without notice. No
liability will be accepted by the publisher for any consequence of its use. Publication
thereof does not convey nor imply any license under patent- or other industrial or
intellectual property rights.
Date of release: 23 June 2000
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Transient thermal impedance . . . . . . . . . . . . . . 4
Document order number: 9397 750 07208
Printed in The Netherlands
N-channel enhancement mode field-effect transistor
PMBF170

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