BUK7880-55A,115 NXP Semiconductors, BUK7880-55A,115 Datasheet - Page 11

• Manufacturer Part Number: BUK7880-55A,115
• Description: MOSFET N-CH TRENCH 55V SOT-223
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7880-55A,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 80 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 7A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 500pF @ 25V
• Power - Max: 8W
• Mounting Type: Surface Mount
• Gate Charge Qg: 12 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 148 mOhms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 7 A
• Power Dissipation: 8 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934061071115

NXP Semiconductors
9. Revision history
Table 6.
BUK7880-55A_1
Product data sheet
Document ID
BUK7880-55A_1
Revision history
Release date
20071101
Rev. 01 — 1 November 2007
Data sheet status
Product data sheet
N-channel TrenchMOS standard level FET
Change notice
-
BUK7880-55A
Supersedes
-
© NXP B.V. 2007. All rights reserved.
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