BSP225,115 NXP Semiconductors, BSP225,115 Datasheet - Page 2

• Manufacturer Part Number: BSP225,115
• Description: MOSFET P-CH 250V 225MA SOT223
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of BSP225,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 15 Ohm @ 200mA, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 225mA
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Input Capacitance (ciss) @ Vds: 90pF @ 25V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 15 Ohm @ 10 V
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.225 A
• Power Dissipation: 1500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934000510115; BSP225 T/R; BSP225 T/R

Philips Semiconductors
FEATURES
DESCRIPTION
P-channel enhancement mode
vertical D-MOS transistor in a
miniature SOT223 envelope,
intended for use in relay, high-speed
and line transformer drivers.
PINNING - SOT223
April 1995
Low R
Direct interface to C-MOS, TTL,
etc.
High-speed switching
No secondary breakdown.
P-channel enhancement mode vertical
D-MOS transistor
PIN
1
2
3
4
DS(on)
gate
drain
source
drain
DESCRIPTION
QUICK REFERENCE DATA
PIN CONFIGURATION
R
SYMBOL
V
I
V
DS(on)
D
DS
GS(th)
handbook, halfpage
drain-source voltage
drain current
drain-source on-resistance
gate-source threshold voltage
2
Top view
Fig.1 Simplified outline and symbol.
PARAMETER
1
2
4
3
MAM121
g
DC value
V
CONDITIONS
I
V
I
GS
D
D
GS
= 200 mA
= 1 mA
= V
= 10 V
DS
d
s
Product specification
250
225
15
2.8
BSP225
MAX.
V
mA
V
UNIT