BSP225,115 NXP Semiconductors, BSP225,115 Datasheet - Page 4
![MOSFET P-CH 250V 225MA SOT223](/photos/1/39/13965/568-sot-223_sc-73_sot223-1_sml.jpg)
BSP225,115
Manufacturer Part Number
BSP225,115
Description
MOSFET P-CH 250V 225MA SOT223
Manufacturer
NXP Semiconductors
Series
-r
Datasheet
1.BSP225115.pdf
(12 pages)
Specifications of BSP225,115
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
15 Ohm @ 200mA, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
225mA
Vgs(th) (max) @ Id
2.8V @ 1mA
Input Capacitance (ciss) @ Vds
90pF @ 25V
Power - Max
1.5W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 65 C
Configuration
Single Dual Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
15 Ohm @ 10 V
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.225 A
Power Dissipation
1500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Gate Charge (qg) @ Vgs
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934000510115
BSP225 T/R
BSP225 T/R
BSP225 T/R
BSP225 T/R
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSP225,115
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
Philips Semiconductors
CHARACTERISTICS
T
April 1995
R
C
C
C
Switching times (see Figs 2 and 3)
t
t
j
on
off
V
I
I
V
SYMBOL
= 25 C unless otherwise specified.
Y
P-channel enhancement mode vertical
D-MOS transistor
DS(on)
iss
oss
rss
DSS
GSS
(BR)DSS
GS(th)
fs
drain-source breakdown voltage
drain-source leakage current
gate-source leakage current
gate-source threshold voltage
drain-source on-resistance
transfer admittance
input capacitance
output capacitance
feedback capacitance
turn-on time
turn-off time
PARAMETER
4
V
V
V
V
f = 1 MHz
f = 1 MHz
f = 1 MHz
I
V
V
I
I
V
I
V
V
V
V
V
V
V
I
V
V
I
V
V
GS
GS
DS
GS
D
D
D
D
D
D
DS
GS
GS
DS
DS
GS
DS
GS
DS
GS
DD
GS
DD
GS
CONDITIONS
= 10 A
= 1 mA
= 200 mA
= 200 mA
= 250 mA
= 250 mA
= 0
= 0
= 0
= V
= 200 V
= 20 V
= 10 V
= 25 V
= 25 V
= 0
= 25 V
= 0
= 25 V
= 0
= 50 V
= 0 to 10 V
= 50 V
= 0 to 10 V
DS
250
0.8
100
MIN. TYP. MAX. UNIT
10
200
65
20
6
5
20
Product specification
BSP225
1
100
2.8
15
90
30
15
10
30
V
nA
V
mS
pF
pF
pF
ns
ns
A