BUK7880-55,135 NXP Semiconductors, BUK7880-55,135 Datasheet - Page 4

• Manufacturer Part Number: BUK7880-55,135
• Description: MOSFET N-CH 55V 7.5A SOT223
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7880-55,135

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 80 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 7.5A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 500pF @ 25V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.08 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 16 V
• Continuous Drain Current: 3.5 A
• Power Dissipation: 1800 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934050520135; BUK7880-55 /T3; BUK7880-55 /T3

Philips Semiconductors
April 1998
TrenchMOS
Standard level FET
ID/A
Fig.5. Typical output characteristics, T
I
ID/A
40
30
20
10
D
130
120
110
100
Fig.6. Typical on-state resistance, T
0
90
80
70
60
= f(V
20
15
10
0
5
0
0
RDS(ON)/mOhm
0
Fig.7. Typical transfer characteristics.
GS
16
12
10
1
) ; conditions: V
Tj/C =
R
5
2
I
DS(ON)
D
= f(V
2
= f(I
10
transistor
DS
3
150
4
ID/A
); parameter V
D
6
); parameter V
VDS/V
4
VGS/V
15
DS
6.5
= 25 V; parameter T
5
6
25
7
20
6
GS
9
8
GS
8
7
10
j
25
j
= 25 ˚C .
= 25 ˚C .
8
30
10
9
9.5
9.0
8.5
8.0
7.5
7.0
6.5
6.0
5.5
5.0
4.5
4.0
j
4
Fig.9. Normalised drain-source on-state resistance.
gfs/S
a = R
V
Fig.8. Typical transconductance, T
2.5
1.5
0.5
-100
9
8
7
6
5
4
3
2
5
4
3
2
1
0
GS(TO)
-100
0
2
1
VGS(TO) / V
a
DS(ON)
max.
min.
typ.
g
Fig.10. Gate threshold voltage.
= f(T
fs
-50
-50
/R
= f(I
DS(ON)25 ˚C
j
); conditions: I
5
BUK98XX-55
D
); conditions: V
0
0
Tmb / degC
Tj / C
= f(T
50
50
10
Rds(on) normalised to 25degC
j
); I
D
= 1 mA; V
D
ID/A
100
100
= 5 A; V
DS
Product specification
= 25 V
BUK7880-55
15
150
150
BUK78xx-55
j
= 25 ˚C .
GS
DS
= 10 V
= V
Rev 1.100
200
200
GS
20