BUK7230-55A,118 NXP Semiconductors, BUK7230-55A,118 Datasheet
BUK7230-55A,118
Specifications of BUK7230-55A,118
BUK7230-55A /T3
BUK7230-55A /T3
Related parts for BUK7230-55A,118
BUK7230-55A,118 Summary of contents
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... BUK7230-55A TrenchMOS™ standard level FET Rev. 01 — 29 September 2000 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ Product availability: BUK7230-55A in SOT428 (D-PAK). 2. Features TrenchMOS™ technology Q101 compliant 175 C rated Standard level compatible. 3. Applications Automotive and general purpose power switching: ...
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... Figure 2 and 100 Figure pulsed Figure Figure pulsed unclamped inductive load starting Rev. 01 — 29 September 2000 BUK7230-55A TrenchMOS™ standard level FET Typ Max Unit 175 Min Max Unit [1] 150 +175 C 55 +175 150 © Philips Electronics N.V. 2000. All rights reserved. ...
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... Product specification 03aa16 125 150 175 200 der Fig 2. Normalized continuous drain current as a function of mounting base temperature. R DSon = D. Rev. 01 — 29 September 2000 BUK7230-55A TrenchMOS™ standard level FET 03aa24 120 I der (%) 100 100 125 150 175 4 ...
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... Product specification Conditions Figure th(j-mb) (K/W) 1 0.5 0.2 0.1 0. 0.02 Single Shot pulse duration. Rev. 01 — 29 September 2000 BUK7230-55A TrenchMOS™ standard level FET Value Unit 71.4 K/W 1.7 K/W 03na50 (s) © Philips Electronics N.V. 2000. All rights reserved. ...
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... 175 MHz; Figure 1 measured from drain lead from package to centre of die measured from source lead from package to source bond pad Rev. 01 — 29 September 2000 BUK7230-55A TrenchMOS™ standard level FET Typ Max Unit 4 500 A 2 100 864 1152 pF 218 ...
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... R DSon 16 (mOhm 4 ( Fig 6. On-state resistance: typical values. 03na47 ( Fig 8. Normalized drain source on-state resistance factor as a function of junction temperature. Rev. 01 — 29 September 2000 BUK7230-55A TrenchMOS™ standard level FET Min Typ Max 0.85 1.2 40 100 03na44 ( 03aa28 2 1.8 1.6 1.4 1 ...
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... Fig 10. Sub-threshold drain current as a function of gate-source voltage. 03na45 1800.0 C (pF) 1600.0 1400.0 1200.0 1000 ( MHz GS Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. Rev. 01 — 29 September 2000 BUK7230-55A TrenchMOS™ standard level FET 03aa35 min typ max (V) ...
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... 175 ( Fig 14. Turn-on gate charge characteristics; typical values. 100 175 0.0 0.2 0.4 0.6 0.8 1.0 1 Rev. 01 — 29 September 2000 BUK7230-55A TrenchMOS™ standard level FET 10 ( 14( 44( (nC 03na42 1.4 1 (V) © Philips Electronics N.V. 2000. All rights reserved ...
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... REFERENCES JEDEC EIAJ TO-252 SC-63 Rev. 01 — 29 September 2000 BUK7230-55A TrenchMOS™ standard level FET max. min. 0.7 10.4 2.95 0.5 0.2 0.5 9.6 2.55 ...
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... Philips Semiconductors 10. Revision history Table 6: Revision history Rev Date CPCN Description 01 20000929 - Product specification; initial version. 9397 750 07568 Product specification Rev. 01 — 29 September 2000 BUK7230-55A TrenchMOS™ standard level FET © Philips Electronics N.V. 2000. All rights reserved ...
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... Rev. 01 — 29 September 2000 BUK7230-55A TrenchMOS™ standard level FET Philips Semiconductors assumes © ...
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... United States: Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: Tel. +381 11 3341 299, Fax. +381 11 3342 553 Internet: http://www.semiconductors.philips.com (SCA70) Rev. 01 — 29 September 2000 BUK7230-55A TrenchMOS™ standard level FET © Philips Electronics N.V. 2000. All rights reserved ...
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... Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 29 September 2000 Document order number: 9397 750 07568 Printed in The Netherlands BUK7230-55A TrenchMOS™ standard level FET ...