BUK7230-55A NXP Semiconductors, BUK7230-55A Datasheet

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology

BUK7230-55A

Manufacturer Part Number
BUK7230-55A
Description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet

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BUK7230-55A
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1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
Table 1.
Symbol Parameter
V
I
P
Avalanche ruggedness
E
Dynamic characteristics
Q
Static characteristics
R
D
DS
tot
DS(AL)S
DSon
GD
Low conduction losses due to low
on-state resistance
Q101 compliant
12 V and 24 V loads
Automotive and general purpose
power switching
BUK7230-55A
N-channel TrenchMOS standard level FET
Rev. 02 — 16 March 2010
drain-source voltage T
drain current
total power
dissipation
non-repetitive
drain-source
avalanche energy
gate-drain charge
drain-source
on-state resistance
Quick reference
V
Conditions
see
T
I
R
T
V
V
V
T
and
D
j
mb
j(init)
j
GS
GS
DS
GS
GS
≥ 25 °C; T
= 34 A; V
= 25 °C; see
Figure 1
= 25 °C; see
= 44 V; see
12
= 5 V; T
= 10 V; I
= 10 V; I
= 50 Ω; V
= 25 °C; unclamped
sup
mb
j
D
D
and
≤ 175 °C
GS
= 25 A;
= 25 A;
≤ 55 V;
= 25 °C;
Figure 11
Figure 14
= 10 V;
3
Figure 2
Suitable for standard level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
Motors, lamps and solenoids
Min
-
-
-
-
-
-
Product data sheet
Typ
-
-
-
-
9
26
Max
55
38
88
58
-
30
Unit
V
A
W
mJ
nC
mΩ

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BUK7230-55A Summary of contents

Page 1

... BUK7230-55A N-channel TrenchMOS standard level FET Rev. 02 — 16 March 2010 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...

Page 2

... Ω sup °C; unclamped j(init) All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 March 2010 BUK7230-55A N-channel TrenchMOS standard level FET Graphic symbol mb G mbb076 Min - - -20 and ...

Page 3

... I DSon δ All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 March 2010 BUK7230-55A N-channel TrenchMOS standard level FET 120 der (%) 100 Normalized total power dissipation as a function of mounting base temperature 03na49 μs 100 μ ...

Page 4

... Transient thermal impedance from junction to mounting base as a function of pulse duration BUK7230-55A_2 Product data sheet Conditions see −5 −4 −3 − All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 March 2010 BUK7230-55A N-channel TrenchMOS standard level FET Min Typ - - Figure 4 - 71.4 03na50 t p δ ...

Page 5

... /dt = -100 A/µ ° All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 March 2010 BUK7230-55A N-channel TrenchMOS standard level FET Min Typ Figure Figure Figure ...

Page 6

... V (V) DS Fig 6. 03aa35 typ max (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 March 2010 BUK7230-55A N-channel TrenchMOS standard level FET 50 DSon Drain-source on-state resistance as a function of gate-source voltage; typical values ...

Page 7

... GS Fig 10. Gate-source threshold voltage as a function of 03na47 100 I (A) D Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 March 2010 BUK7230-55A N-channel TrenchMOS standard level FET 5 GS(th) (V) 4 max 3 typ 2 min 1 0 − junction temperature 2 ...

Page 8

... Fig 14. Turn-on gate charge characteristics; typical 1600 C (pF) 1200 C 800 C 400 C 0 −2 − All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 March 2010 BUK7230-55A N-channel TrenchMOS standard level FET values 03na48 ...

Page 9

... min min 5.46 0.56 6.22 6.73 4.0 4.45 5.00 0.20 5.98 6.47 REFERENCES JEDEC JEITA SC-63 TO-252 All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 March 2010 BUK7230-55A N-channel TrenchMOS standard level FET min 10.4 2.95 2.285 4.57 0.5 9.6 2.55 EUROPEAN PROJECTION SOT428 ...

Page 10

... BUK7230-55A_2 Product data sheet N-channel TrenchMOS standard level FET Data sheet status Change notice Product data sheet - Product specification - All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 March 2010 BUK7230-55A Supersedes BUK7230_55A-01 - © NXP B.V. 2010. All rights reserved ...

Page 11

... All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 March 2010 BUK7230-55A N-channel TrenchMOS standard level FET © NXP B.V. 2010. All rights reserved ...

Page 12

... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of NXP B.V. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 March 2010 BUK7230-55A N-channel TrenchMOS standard level FET Trademarks © NXP B.V. 2010. All rights reserved ...

Page 13

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 16 March 2010 Document identifier: BUK7230-55A_2 ...

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