BSP130,115 NXP Semiconductors, BSP130,115 Datasheet - Page 2

• Manufacturer Part Number: BSP130,115
• Description: MOSFET N-CH 300V 350MA SOT223
• Manufacturer: NXP Semiconductors

Specifications of BSP130,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Mounting Type: Surface Mount
• Power - Max: 1.5W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Vgs(th) (max) @ Id: 2V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 350mA
• Drain To Source Voltage (vdss): 300V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6 Ohm @ 250mA, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 6 Ohm @ 10 V
• Drain-source Breakdown Voltage: 300 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.35 A
• Power Dissipation: 1500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934023500115::BSP130 T/R::BSP130 T/R

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
N-channel enhancement mode vertical D-MOS transistor
in a SOT223 package.
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on an epoxy printed-circuit board, 40 x 40 x 1.5 mm, mounting pad for the drain tab minimum 6 cm
2001 Dec 11
V
I
P
V
R
V
V
V
I
I
P
T
T
D
D
DM
stg
j
Direct interface to C-MOS, TTL, etc.
High-speed switching
No secondary breakdown.
Line current interruptor in telephone sets
Relay, high-speed and line transformer drivers.
DS
tot
GSO
GSoff
DS
GSO
tot
DSon
N-channel enhancement mode
vertical D-MOS transistor
SYMBOL
SYMBOL
drain-source voltage (DC)
drain current (DC)
total power dissipation
gate-source voltage
drain-source on-state
resistance
gate-source cut-off voltage
drain-source voltage (DC)
gate-source voltage (DC)
drain current (DC)
peak drain current
total power dissipation
storage temperature
junction temperature
PARAMETER
PARAMETER
T
open drain
I
I
open drain
T
D
D
amb
amb
= 250 mA; V
= 1 mA; V
25 C
25 C; note 1
CONDITIONS
CONDITIONS
2
DS
PINNING - SOT223
handbook, halfpage
GS
= V
Marking code BSP130.
PIN
= 10 V
1
2
3
4
GS
Top view
Fig.1 Simplified outline and symbol.
gate
drain
source
drain
1
2
0.8
4
55
MIN.
MIN.
3
DESCRIPTION
MAM054
g
Product specification
300
350
1.5
6
2
300
350
1.4
1.5
+150
150
20
20
MAX.
MAX.
BSP130
d
s
V
mA
W
V
V
V
V
mA
A
W
C
C
UNIT
UNIT
2
.