BSP130,115 NXP Semiconductors, BSP130,115 Datasheet - Page 4

• Manufacturer Part Number: BSP130,115
• Description: MOSFET N-CH 300V 350MA SOT223
• Manufacturer: NXP Semiconductors

Specifications of BSP130,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Mounting Type: Surface Mount
• Power - Max: 1.5W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Vgs(th) (max) @ Id: 2V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 350mA
• Drain To Source Voltage (vdss): 300V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6 Ohm @ 250mA, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 6 Ohm @ 10 V
• Drain-source Breakdown Voltage: 300 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.35 A
• Power Dissipation: 1500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934023500115::BSP130 T/R::BSP130 T/R

Philips Semiconductors
2001 Dec 11
handbook, halfpage
handbook, halfpage
N-channel enhancement mode
vertical D-MOS transistor
P tot
(W)
1.5
0.5
2
1
0
0
10 V
0 V
Fig.2 Switching times test circuit.
Fig.4 Power derating curve.
50
50
100
V DD = 50 V
I D
150
MBB691
T j ( C)
MRC218
200
4
handbook, halfpage
handbook, halfpage
V
Fig.5
GS
(pF)
250
200
150
100
= 0; f = 1 MHz; T
INPUT
OUTPUT
C
50
0
0
Capacitance as a function of drain-source
voltage; typical values.
Fig.3 Input and output waveforms.
10 %
j
t on
= 25 C.
10
90 %
90 %
20
Product specification
V DS (V)
t off
C oss
BSP130
C iss
C rss
MLD765
MBB692
10 %
30