SI4410DY,518 NXP Semiconductors, SI4410DY,518 Datasheet - Page 3

• Manufacturer Part Number: SI4410DY,518
• Description: MOSFET N-CH 30V 10A SOT96-1
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of SI4410DY,518

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 13.5 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 34nC @ 5V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.007 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 110 A
• Power Dissipation: 203 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934056382518; SI4410DY /T3; SI4410DY /T3

NXP Semiconductors
SI4410DY_3
Product data sheet
Fig 1.
Fig 3.
(%)
(A)
I
I
10
10
der
D
120
10
80
40
10
−1
−2
0
1
2
10
function of ambient temperature
Normalized continuous drain current as a
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
0
−1
P
R
DSon
t
p
= V
T
50
DS
/I
δ =
D
t
T
p
t
100
150
T
amb
1
03aa19
(°C)
Rev. 03 — 4 December 2009
200
D.C.
Fig 2.
P
(%)
120
der
80
40
0
function of ambient temperature
Normalized total power dissipation as a
0
10
N-channel TrenchMOS logic level FET
50
100
V
DS
t
1 ms
10 ms
100 ms
10 s
(V)
p
= 10 µs
SI4410DY
150
© NXP B.V. 2009. All rights reserved.
T
amb
03aa11
03ae23
(°C)
200
10
2
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