SI4410DY,518 NXP Semiconductors, SI4410DY,518 Datasheet - Page 8

• Manufacturer Part Number: SI4410DY,518
• Description: MOSFET N-CH 30V 10A SOT96-1
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of SI4410DY,518

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 13.5 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 34nC @ 5V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.007 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 110 A
• Power Dissipation: 203 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934056382518; SI4410DY /T3; SI4410DY /T3

NXP Semiconductors
SI4410DY_3
Product data sheet
Fig 13. Forward transconductance as a function of
g
(S)
fs
40
30
20
10
0
drain current; typical values
0
V
DS
> I
10
D
x R
DSon
20
30
T
j
150 °C
= 25 °C
40
I
D
03ae24
(A)
Rev. 03 — 4 December 2009
50
Fig 14. Source current as a function of source-drain
(A)
I
S
50
40
30
20
10
0
voltage; typical values
0
V
GS
N-channel TrenchMOS logic level FET
= 0 V
150 °C
0.4
0.8
T
j
= 25 °C
SI4410DY
1.2
© NXP B.V. 2009. All rights reserved.
V
SD
03ad53
(V)
1.6
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