BUK9628-55A,118 NXP Semiconductors, BUK9628-55A,118 Datasheet - Page 6

• Manufacturer Part Number: BUK9628-55A,118
• Description: MOSFET N-CH 55V 42A D2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9628-55A,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 25 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 42A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 1725pF @ 25V
• Power - Max: 99W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.025 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 42 A
• Power Dissipation: 99000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934056266118; BUK9628-55A /T3; BUK9628-55A /T3

Table 5:
T
Philips Semiconductors
9397 750 07683
Product specification
Symbol
Source-drain diode
V
t
Q
rr
j
Fig 5. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
SD
r
= 25 C unless otherwise specified
T
T
j
j
= 25 C; t
= 25 C
function of drain-source voltage; typical values.
R DSon
of drain current; typical values.
(m )
I D
(A)
Characteristics
160
140
120
100
80
60
40
20
Parameter
source-drain (diode forward)
voltage
reverse recovery time
recovered charge
0
55
50
45
40
35
30
25
20
15
0
p
0
= 300 s
V GS (V) = 3
10
2
V GS (V) = 10
20
…continued
3.2
30
4
3.4
40
9
6
50
3.6 3.8
60
8
V DS (V)
70
4
Conditions
I
Figure 15
I
V
03na86
S
S
GS
= 25 A; V
= 20 A; dI
80
03na87
10
= 10 V; V
I D (A)
5
8
7
6
5
4
2.2
3
Rev. 01 — 18 January 2001
90
GS
S
BUK9528-55A; BUK9628-55A
/dt = 100 A/ s
= 0 V;
DS
= 30 V
Fig 6. Drain-source on-state resistance as a function
Fig 8. Normalized drain-source on-state resistance
T
j
a
= 25 C; I
=
of gate-source voltage; typical values.
factor as a function of junction temperature.
R DSon
a
--------------------------- -
R
(m )
2.2
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
DSon 25 C
2
1
0
35
30
25
20
15
10
R
-60
DSon
2
D
Min
= 15 A
-20
4
20
TrenchMOS™ logic level FET
Typ
0.85
35
70
60
6
© Philips Electronics N.V. 2001. All rights reserved.
100
8
140
Max
1.2
T
V GS (V)
j
( o C)
03aa28
03na84
180
10
Unit
V
ns
nC
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